Variation of the layer thickness to study the electrical property of PECVD Al2O3 / c-Si interface

Energy Procedia

Volumn 8, Issue , 2011, Pages 642-647

  Saint Cast, Pierre ^a   Heo, Youn Ho ^a   Billot, Etienne ^a   Olwal, Peter ^a   Hofmann, Marc ^a   Rentsch, Jochen ^a   Glunz, Stefan W ^a   Preu, Ralf ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Capture cross section; DLTS; PECVD; Surface passivation

Indexed keywords

CRYSTALLINE MATERIALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECT DENSITY; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON OXIDES; SURFACE DEFECTS;

CAPTURE CROSS SECTIONS; CHEMICAL PASSIVATION; CRYSTALLINE SILICONS; DLTS MEASUREMENTS; ELECTRON-CAPTURE CROSS SECTIONS; INTERFACE DEFECTS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

ALUMINUM;

EID: 80052096021     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.195     Document Type: Conference Paper

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