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Applied Physics Letters

Volumn 103, Issue 22, 2013, Pages

Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

(2) Caraveo Frescas, J A a Alshareef, H N a

a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

ENHANCEMENT MODES; FIELD-EFFECT; NANOWIRE TRANSISTORS; OXIDE SEMICONDUCTOR; P-TYPE OXIDE SEMICONDUCTORS; PROCESS TEMPERATURE; SUBTHRESHOLD SWING; TIN MONOXIDES;

FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HOLE MOBILITY; NANOWIRES; THIN FILM TRANSISTORS; THIN FILMS;

TRANSISTORS;

EID: 84888614617 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4833541 Document Type: Article

Times cited : (54)

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