Debye length and active layer thickness-dependent performance variations of amorphous oxide-based TFTs

IEEE Transactions on Electron Devices

Volumn 59, Issue 3, 2012, Pages 710-714

  Jeong, Jaewook ^a   Hong, Yongtaek ^b  

^a Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); off current; oxide based; simulation; thin film transistor (TFT); threshold voltage shift

Indexed keywords

ACTIVE LAYER; DEBYE LENGTH; DEPLETION MODES; DEVICE SIMULATORS; INVERSE PROPORTIONS; LIGHT ILLUMINATION; NEGATIVE SHIFT; OFF CURRENT; PERFORMANCE VARIATIONS; SIMULATION; SQUARE ROOTS; THRESHOLD VOLTAGE SHIFT;

FIELD EFFECT TRANSISTORS; GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

THRESHOLD VOLTAGE;

EID: 84857651981     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2180908     Document Type: Article

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