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Applied Physics Letters

Volumn 101, Issue 9, 2012, Pages

Full swing logic inverter with amorphous SiInZnO and GaInZnO thin film transistors

(2) Debnath, Pulak Chandra a,b Lee, Sang Yeol c

a Korea Institute of Science and Technology (South Korea)

b University of Science and Technology (UST) (South Korea)

c Chongju University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION-MODE LOADS; ENHANCEMENT MODES; FULL-SWING; GAINZNO; METAL OXIDE SEMICONDUCTOR; N-CHANNEL; NEGATIVE VALUES; POSITIVE VALUE; SWITCHING CHARACTERISTICS; VOLTAGE GAIN;

FIELD EFFECT TRANSISTORS; SEMICONDUCTING SILICON; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC;

AMORPHOUS SILICON;

EID: 84865846482 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4747800 Document Type: Article

Times cited : (31)

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