Effect of channel thickness on electrical performance of amorphous IGZO thin-film transistor with atomic layer deposited alumina oxide dielectric

Current Applied Physics

Volumn 14, Issue 7, 2014, Pages 941-945

  Li, Y ^a   Pei, Y L ^a,b   Hu, R Q ^a   Chen, Z M ^a   Zhao, Y ^a   Shen, Z ^a   Fan, B F ^a   Liang, J ^c   Wang, G ^a  

^a SUN YAT SEN UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

^c PEKING UNIVERSITY   (China)

Author keywords

alpha; IGZO TFTs; Channel thickness; Stability

Indexed keywords

ALUMINA; ALUMINUM OXIDE; AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; ATOMIC LAYER DEPOSITION; BIAS VOLTAGE; CONVERGENCE OF NUMERICAL METHODS; ELECTRIC RESISTANCE; FILM THICKNESS; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

AMORPHOUS-INDIUM GALLIUM ZINC OXIDES; ATOMIC LAYER DEPOSITED; CHANNEL THICKNESS; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; IGZO TFTS; THRESHOLD VOLTAGE SHIFTS; VERTICAL ELECTRICAL FIELDS;

THIN FILM TRANSISTORS;

EID: 84901471349     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2014.04.011     Document Type: Article

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