Gate-bias stress stability of P-type SnO thin-film transistors fabricated by RF-sputtering

IEEE Electron Device Letters

Volumn 35, Issue 1, 2014, Pages 90-92

  Chiu, I Chung ^a   Cheng, I Chun ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Gate bias stress stability; p type thin film transistor; tin monoxide

Indexed keywords

FIELD-EFFECT MOBILITIES; GATE-BIAS STRESS; ON/OFF CURRENT RATIO; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS; TIN MONOXIDES; TRANSFER CHARACTERISTICS;

CHARGE TRAPPING; GAS ADSORPTION; GATE DIELECTRICS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; TIN;

BIAS VOLTAGE;

EID: 84891529953     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2291896     Document Type: Article

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