Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n -type a-In-Ga-Zn-O and p -type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

Applied Physics Letters

Volumn 96, Issue 26, 2010, Pages

  Nomura, Kenji ^a   Aoki, Takashi ^b   Nakamura, Kiyoshi ^b   Kamiya, Toshio ^a   Nakanishi, Takashi ^c   Hasegawa, Takayuki ^c   Kimura, Mutsumi ^c   Kawase, Takeo ^b   Hirano, Masahiro ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

^c RYUKOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDES; BITHIOPHENES; COMPLEMENTARY INVERTERS; FABRICATION PROCESS; INVERTER OPERATIONS; P-TYPE; SATURATION MOBILITY; VOLTAGE GAIN;

AMORPHOUS FILMS; GALLIUM; INTEGRATED CIRCUITS; ZINC;

THIN FILM TRANSISTORS;

EID: 77954333717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3458799     Document Type: Article

References (17)

1. Flexible Electronics: Materials and Applications, edited by, W. S. Wong, and, A. Salleo, (Springer, New York, 2008).
2. S. D. Theiss and S. Wagner, IEEE Electron Device Lett. EDLEDZ 0741-3106 17, 578 (1996). 10.1109/55.545776
3. P. S. Heremans, Nature (London) NATUAS 0028-0836 444, 828 (2006). 10.1038/444828a (Pubitemid 46024982)
4. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) NATUAS 0028-0836 432, 488 (2004).
5. Wafer Level 3-D ICs Process Technology, edited by, C. S. Tan, R. J. Gutmann, and, L. R. Reif, (Springer, New York, 2008).
6. J. -H. Ahn, H. -S. Kim, K. J. Lee, S. Jeon, S. J. Kang, Y. Sun, R. G. Nuzzo, and J. A. Rogers, Science SCIEAS 0036-8075 314, 1754 (2006). 10.1126/science.1132394 (Pubitemid 44969082)
7. A. Javey, S. Nam, R. S. Friendman, H. Yan, and C. M. Lieber, Nano Lett. NALEFD 1530-6984 7, 773 (2007). 10.1021/nl063056l (Pubitemid 46516064)
8. S. W. Nam, X. Jiang, Q. Xiong, D. Ham, and C. M. Lieber, Proc. Natl. Acad. Sci. U.S.A. PNASA6 0027-8424 106, 21035 (2009). 10.1073/pnas.0911713106
9. A. Dodabalapur, J. Baumbach, K. Baldwin, and H. E. Katz, Appl. Phys. Lett. APPLAB 0003-6951 68, 2246 (1996). 10.1063/1.115873 (Pubitemid 126683775)
10. S. Gowrisanker, M. A. Quevedo-Lopeza, H. N. Alshareefa, B. E. Gnadea, S. Venugopalb, R. Krishnab, K. Kaftanoglub, and D. R. Alleeb, Org. Electron. OERLAU 1566-1199 10, 1217 (2009). 10.1016/j.orgel.2009.06.012
11. M. S. Oh, D. K. Hwang, K. Lee, S. Im, and S. Yi, Appl. Phys. Lett. APPLAB 0003-6951 90, 173511 (2007). 10.1063/1.2732819 (Pubitemid 46748418)
12. H. Iechi, Y. Watanabe, and K. Kudo, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 46, 2645 (2007). 10.1143/JJAP.46.2645 (Pubitemid 47256842)
13. J. H. Na, M. Kitamura, and Y. Arakawa, Appl. Phys. Lett. APPLAB 0003-6951 93, 213505 (2008). 10.1063/1.3039779
14. D. A. Mourey, S. K. Park, D. A. Zhao, J. Sun, Y. V. Li, S. Subramanian, S. F. Nelson, D. H. Levy, J. E. Anthony, and T. N. Jackson, Org. Electron. OERLAU 1566-1199 10, 1632 (2009). 10.1016/j.orgel.2009.08.021
15. K. E. Paul, W. S. Wong, S. E. Ready, and R. A. Street, Appl. Phys. Lett. APPLAB 0003-6951 83, 2070 (2003). 10.1063/1.1609233
16. T. Kawase, S. Moriya, C. J. Newsome1, and T. Shimoda, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 44, 3649 (2005). 10.1143/JJAP.44.3649 (Pubitemid 41205393)
17. K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 45, 4303 (2006). 10.1143/JJAP.45.4303 (Pubitemid 43804578)