Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices

Microelectronics Reliability

Volumn 54, Issue 9-10, 2014, Pages 2266-2271

  Raghavan, Nagarajan ^a   Bosman, Michel ^b   Frey, Daniel D ^c   Pey, Kin Leong ^a  

^a SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Forming; Grain boundary; Kinetic Monte Carlo; Oxygen vacancy; RRAM; Variability

Indexed keywords

DIELECTRIC FILMS; FORMING; GRAIN BOUNDARIES; METALS; OXIDE FILMS; OXYGEN; OXYGEN VACANCIES; RRAM;

KINETIC MONTE CARLO; METAL OXIDE INTERFACE; MULTILAYER DIELECTRICS; NONVOLATILE MEMORY DEVICES; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING MEMORY; TECHNOLOGY DEVELOPMENT; VARIABILITY;

MONTE CARLO METHODS;

EID: 84908548592     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2014.07.118     Document Type: Conference Paper

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