Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Chen, Yang Yin ^b   Degraeve, Robin ^a   Clima, Sergiu ^a   Govoreanu, Bogdan ^a   Goux, Ludovic ^a   Fantini, Andrea ^b   Kar, Gouri Sankar ^a   Pourtois, Geoffrey ^a   Groeseneken, Guido ^b   Wouters, Dirk J ^b   Jurczak, Malgorzata ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SWITCHING; DEGRADATION MECHANISM; IN-DEPTH UNDERSTANDING; LOW CURRENTS; LOW OPERATION CURRENTS; NON-VOLATILE MEMORY; RELIABILITY FAILURE; VACANCY MOBILITY;

DATA STORAGE EQUIPMENT; DEGRADATION; ELECTRON DEVICES; TRANSITION METAL COMPOUNDS;

HAFNIUM OXIDES;

EID: 84876128318     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479079     Document Type: Conference Paper

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