Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO 2) layers for non-volatile semiconductor memory (NVSM) applications

Microelectronics Reliability

Volumn 52, Issue 1, 2012, Pages 107-111

  Mroczyński, Robert ^a   Beck, Romuald B ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM LAYERS; CONSTANT CURRENT; DC STRESS; DOUBLE GATE; GATE STRUCTURE; HAFNIUM DIOXIDE; HIGH-TEMPERATURE ANNEALING; MIS STRUCTURE; NON-VOLATILE; OXYNITRIDES; RETENTION CHARACTERISTICS; SEMICONDUCTOR MEMORY; SILICON OXYNITRIDE LAYERS; TOP GATE; ULTRA-THIN;

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATE DIELECTRICS; HAFNIUM; HAFNIUM OXIDES; LEAKAGE CURRENTS; MIS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR STORAGE; SILICON NITRIDE; SILICON OXIDES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84155167227     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.08.010     Document Type: Conference Paper

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