RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx RRAM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2013, Pages

  Raghavan, N ^a   Degraeve, R ^a   Goux, L ^a   Fantini, A ^a,b   Wouters, D J ^a,b   Groeseneken, G ^a,b   Jurczak, M ^a  

^a IMEC   (Belgium)

^b KU   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-RESISTANCE STATE; IONIC MIGRATION; RANDOM TELEGRAPH NOISE; READ OPERATION; RESISTIVE SWITCHING MEMORY; SHAPE AND SIZE; TRANSPORT MODELING; ULTRA-LOW POWER;

DIELECTRIC MATERIALS;

EID: 84883344955     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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