A ZnTaOx based resistive switching random access memory

ECS Solid State Letters

Volumn 3, Issue 7, 2014, Pages

  Zheng, K ^a   Zhao, J L ^b   Leck, K S ^a   Teo, K L ^b   Yeo, E G ^c   Sun, X W ^a,d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c DATA STORAGE INSTITUTE   (Singapore)

^d SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

RANDOM ACCESS STORAGE;

CONDUCTIVE FILAMENTS; COSPUTTERING; INTRINSIC DEFECTS; OPERATING VOLTAGE; OXIDE COMPOUNDS; RANDOM ACCESS MEMORY; RESISTANCE DISTRIBUTION; RESISTIVE SWITCHING;

SWITCHING SYSTEMS;

EID: 84903151038     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.0101407ssl     Document Type: Article

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