Bilayer gate dielectric study by scanning tunneling microscopy

Applied Physics Letters

Volumn 91, Issue 10, 2007, Pages

  Ong, Y C ^a   Ang, D S ^a   Pey, K L ^a   O'Shea, S J ^b   Goh, K E J ^b   Troadec, C ^b   Tung, C H ^c   Kawanago, T ^d   Kakushima, K ^d   Iwai, H ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; NITROGEN; POLYCRYSTALLINE MATERIALS; SCANDIUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

BILAYER GATE DIELECTRICS; POLYCRYSTALLINE FILMS;

GATE DIELECTRICS;

EID: 34548482219     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2780084     Document Type: Article

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