Study of preferential localized degradation and breakdown of HfO 2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Microelectronic Engineering

Volumn 109, Issue , 2013, Pages 364-369

  Shubhakar, Kalya ^a,b,c   Pey, Kin Leong ^b   Raghavan, Nagarajan ^a   Kushvaha, Sunil Singh ^c   Bosman, Michel ^c   Wang, Zhongrui ^a   O'Shea, Sean Joseph ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Conductive AFM; Dielectric Breakdown; Grain boundary; High K

Indexed keywords

CONDUCTIVE-AFM; CONDUCTIVE-ATOMIC FORCE; FAILURE DISTRIBUTION MODELS; HIGH-K; METAL OXIDE SEMICONDUCTOR; PERFORMANCE AND RELIABILITIES; POLYCRYSTALLINE MICROSTRUCTURE; TIME-DEPENDENT DIELECTRIC BREAKDOWN LIFETIMES;

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; DIELECTRIC FILMS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; GATE DIELECTRICS; GRAIN BOUNDARIES; HAFNIUM OXIDES; MOS DEVICES;

LEAKAGE CURRENTS;

EID: 84876971425     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.03.021     Document Type: Article

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