Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2

ACS Nano

Volumn 8, Issue 10, 2014, Pages 10551-10558

  Kim, In Soo ^a   Sangwan, Vinod K ^a   Jariwala, Deep ^a   Wood, Joshua D ^a   Park, Spencer ^a   Chen, Kan Sheng ^a   Shi, Fengyuan ^a   Ruiz Zepeda, Francisco ^d   Ponce, Arturo ^d   Jose Yacaman, Miguel ^d   Dravid, Vinayak P ^a,c   Marks, Tobin J ^a,b   Hersam, Mark C ^a,b   Lauhon, Lincoln J ^a  

^a Northwestern University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

^d UNIVERSITY OF TEXAS AT SAN ANTONIO   (United States)

Author keywords

chemical vapor deposition; field effect mobility; molybdenum disulfide; photoluminescence; stoichiometry; transition metal dichalcogenides; X ray photoelectron spectroscopy

Indexed keywords

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; LAYERED SEMICONDUCTORS; MOLYBDENUM METALLOGRAPHY; MOLYBDENUM OXIDE; MONOLAYERS; OPTICAL PROPERTIES; PHOTOELECTRONS; PHOTOLUMINESCENCE; PHOTONS; STOICHIOMETRY; SULFUR COMPOUNDS; THRESHOLD VOLTAGE; TRANSITION METALS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL VAPOR DEPOSITIONS (CVD); ELECTRICAL AND OPTICAL PROPERTIES; FIELD-EFFECT MOBILITIES; MOLYBDENUM DISULFIDE; OPTICAL AND ELECTRICAL PROPERTIES; OPTOELECTRONIC APPLICATIONS; OPTOELECTRONIC PROPERTIES; TRANSITION METAL DICHALCOGENIDES;

CHEMICAL VAPOR DEPOSITION;

DISULFIDE; MOLYBDENUM; MOLYBDENUM DISULFIDE;

CHEMISTRY; RAMAN SPECTROMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

DISULFIDES; MOLYBDENUM; PHOTOELECTRON SPECTROSCOPY; SPECTRUM ANALYSIS, RAMAN;

EID: 84908430958     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503988x     Document Type: Article

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