Postgrowth tuning of the bandgap of single-layer molybdenum disulfide films by sulfur/selenium exchange

ACS Nano

Volumn 8, Issue 5, 2014, Pages 4672-4677

  Ma, Quan ^a   Isarraraz, Miguel ^a   Wang, Chen S ^a   Preciado, Edwin ^a   Klee, Velveth ^a   Bobek, Sarah ^a   Yamaguchi, Koichi ^a   Li, Emily ^a   Odenthal, Patrick Michael ^a   Nguyen, Ariana ^a   Barroso, David ^a   Sun, Dezheng ^a,c   Von Son Palacio, Gretel ^a   Gomez, Michael ^a   Nguyen, Andrew ^a   Le, Duy ^b   Pawin, Greg ^a   Mann, John ^a   Heinz, Tony F ^c   Rahman, Talat Shahnaz ^b   Bartels, Ludwig ^a   more..

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

^c Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

atomically thin films; bandgap engineering; CVD; molybdenum diselenide; molybdenum disulfide; sputtering; transition metal dichalcogenides

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ENERGY GAP; MOLYBDENUM; SELENIUM; SELENIUM COMPOUNDS; SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND GAP ENGINEERING; BAND GAP SHIFTS; BAND-GAP TUNING; COMPUTATIONAL STUDIES; MOLYBDENUM DISELENIDE; MOLYBDENUM DISULFIDE; OPTICAL BANDS; TRANSITION METAL DICHALCOGENIDES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84901659524     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5004327     Document Type: Article

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