Exceptional charge transport properties of graphene on germanium

ACS Nano

Volumn 8, Issue 10, 2014, Pages 10237-10245

  Cavallo, Francesca ^a,c   Rojas Delgado, Richard ^a   Kelly, Michelle M ^b,d   Sánchez Pérez, José R ^a   Schroeder, Daniel P ^a   Xing, Huili Grace ^b   Eriksson, Mark A ^a   Lagally, Max G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c UNIVERSITY OF NEW MEXICO   (United States)

^d NONE   (United States)

Author keywords

doping; Germanium substrate; graphene; high mobility; interface states; low sheet resistivity

Indexed keywords

CARRIER TRANSPORT; DOPING (ADDITIVES); GERMANIUM; HALL MOBILITY; HOLE MOBILITY; INTERFACE STATES; SUBSTRATES; TRANSPORT PROPERTIES;

ANALOG ELECTRONICS; GERMANIUM SUBSTRATES; HIGH MOBILITY; SHEET RESISTIVITY; THEORETICAL LIMITS; TRANSPORT MEASUREMENTS;

GRAPHENE;

EID: 84908426181     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503381m     Document Type: Article

References (51)

1. Neto, A. H.; Guinea, F.; Peres, N. M. R.; Novoselov, K. S.; Geim, A. K. The Electronic Properties of Graphene Rev. Mod. Phys. 2009, 81, 109-162
2. Bolotin, K.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fundenberg, G.; Hone, J.; Kim, P.; Störmer, H. L. Ultrahigh Electron Mobility in Suspended Graphene Solid State Commun. 2008, 146, 351-355
3. Bolotin, K.; Sikes, K. J.; Störmer, H. L.; Hone, J.; Kim, P. Temperature-Dependent Transport in Suspended Graphene Phys. Rev. Lett. 2008, 101, 096802
4. CRC Materials Science and Engineering Handbook; Shackelford, J. F.; Alexander, W., Eds.; CRC Press: Boca Raton, FL, 2000; p 941.
5. Trushin, M.; Schliemann, J. Minimum Electrical and Thermal Conductivity of Graphene: A Quasiclassical Approach Phys. Rev. Lett. 2007, 99, 216602
6. CRC Materials Science and Engineering Handbook; Shackelford, J. F.; Alexander, W., Eds.; CRC Press: Boca Raton, FL, 2000; p 384.
7. 2 Appl. Phys. Lett. 2010, 97, 082112
8. Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L.; Hone, J. Boron Nitride Substrates for High-Quality Graphene Electronics Nat. Nanotechnol. 2010, 5, 722-726
9. Schedin, F.; Geim, A. K.; Morozov, S. V.; Hill, E. W.; Blake, P.; Katsnelson, M. I.; Novoselov, K. S. Detection of Individual Gas Molecules Adsorbed on Graphene Nat. Mater. 2007, 6, 652-655
10. Adam, S.; Hwang, E. H.; Galitski, V. M.; Das Sarma, S. A Self-Consistent Theory for Graphene Transport Proc. Natl. Acad. Sci. U. S. A. 2007, 104, 18392-18397
11. Stauber, T.; Peres, N. M. R.; Guinea, F. Electronic Transport in Graphene: A Semiclassical Approach Including Midgap States Phys. Rev. B: Condens. Matter Mater. Phys. 2007, 76, 205423
12. Katsnelson, M. I.; Geim, A. K. Electron Scattering on Microscopic Corrugations in Graphene Philos. Trans. R. Soc., A 2008, 366, 195-204
13. Tan, Y. W.; Zhang, Y.; Bolotin, K.; Zhao, Y.; Adam, S.; Hwang, E. H.; Das Sarma, S.; Störmer, H. L.; Kim, P. Measurement of Scattering Rate and Minimum Conductivity in Graphene Phys. Rev. Lett. 2007, 99, 246803
14. Chen, J. H.; Jang, C.; Adam, S.; Fuhrer, M. S.; Williams, E. D.; Ishigami, M. Charged-Impurity Scattering in Graphene Nat. Phys. 2008, 4, 377-381
15. Yan, X.-Z.; Romiah, Y.; Ting, C. S. Electric Transport Theory of Dirac Fermions in Graphene Phys. Rev. B: Condens. Matter Mater. Phys. 2008, 77, 125409
16. Novikov, D. S. Numbers of Donors and Acceptors from Transport Measurements in Graphene Appl. Phys. Lett. 2007, 91, 102102
17. Adam, S.; Hwang, E. H.; Das Sarma, S. Scattering Mechanisms and Boltzmann Transport in Graphene Phys. E 2008, 40, 1022-1025
18. Hwang, E. H.; Adam, S. Das Sarma, Carrier Transport in Two-Dimensional Graphene Layers Phys. Rev. Lett. 2007, 98, 186806
19. Cheianov, V. V.; Falko, V. I. Friedel Oscillations, Impurity Scattering, and Temperature Dependence of Resistivity in Graphene Phys. Rev. Lett. 2006, 97, 226801
20. Nomura, K.; MacDonald, A. H. Quantum Transport of Massless Dirac Fermions Phys. Rev. Lett. 2007, 98, 076602
21. Ando, T. Screening Effect and Impurity Scattering in Monolayer Graphene J. Phys. Soc. Jpn. 2006, 75, 074716
22. 2 Nano Lett. 2007, 7, 1643-1648
23. Morozov, S. V.; Novoselov, K. S.; Katsnelson, M. I.; Schedin, F.; Elias, D. C.; Jaszczak, J. A.; Geim, A. K. Giant Intrinsic Carrier Mobilities in Graphene and its Bilayer Phys. Rev. Lett. 2008, 100, 016602
24. Teng, L.; Zhao, Z. Substrate-Regulated Morphology of Graphene J. Phys. D: Appl. Phys. 2010, 43, 075303
25. Kingston, R. H. Review of Germanium Surface Phenomena J. Appl. Phys. 1956, 27, 101-114
26. Dabrowski, J.; Muessig, H.-J. Silicon Surfaces and Formation of Interfaces: Basic Science in the Industrial World; World Scientific Pub. Co.: Singapore, 2000.
27. Cooper, D. R.; DAnjou, B.; Ghattamaneni, N.; Harack, B.; Hilke, M.; Horth, A.; Majlis, N.; Massicotte, M.; Vandsburger, L.; Whiteway, E.; Yu, V. Experimental Review of Graphene ISRN Condens. Matter Phys. 2012, 501686
28. Schmeisser, D. Surface Oxidation States of Germanium Surf. Sci. 1986, 172, 455-465
29. Bodlaki, D.; Yamamoto, H.; Waldeck, D. H.; Borguet, E. Ambient Stability of Chemically Passivated Germanium Interfaces Surf. Sci. 2003, 543, 63-74
30. Park, K.; Lee, Y.; Lee, J.; Lim, S. Oxidation Mechanism of Hydrogen-Terminated Ge(100) Surface Appl. Surf. Sci. 2008, 254, 4828-4832
31. Kuzum, D.; Krishnamohan, T.; Pethe, A. J.; Okyay, A. Y.; Oshima, Y.; Sun, Y.; McVittie, J. P.; Pianetta, P. A.; McIntyre, P. C.; Saraswat, K. C. Ge Interface Engineering with Ozone Oxidation for Low Interface State Density IEEE Electron Device Lett. 2008, 29, 328-330
32. Sze, S. M.; Ng, K. K.; Physics of Semiconductor Devices; Wiley: New York, 1981.
33. An, Y.; Benham, A.; Pop, E.; Ural, A. Metal-Semiconductor-Metal Photodetectors Based on Graphene/p-type Silicon Schottky Junctions Appl. Phys. Lett. 2013, 102, 013110
34. Zhong, H.; Xu, K.; Liu, Z.; Xu, G.; Shi, L.; Fan, Y.; Wang, J.; Ren, G.; Yang, H. Charge Transport Mechanisms of Graphene/Semiconductor Schottky Barriers: A Theoretical and Experimental Study J. Appl. Phys. 2014, 115, 013701
35. Kuzum, D.; Martens, K.; Krishnamohan, T.; Saraswat, K. C. Characteristics of Surface States and Charge Neutrality Level in Ge Appl. Phys. Lett. 2009, 95, 252101
36. 2 Surf. Sci. 2008, 602, 2373-2381
37. Hashemi, F.; Thombare, S.; Fontcuberta i Morral, A.; Brongersma, M. L.; McIntyre, P. C. Effects of Surface Oxide Formation on Germanium Nanowire Band-edge Photoluminescence Appl. Phys. Lett. 2013, 102, 251122
38. 1- xAs Heterostructures J. Appl. Phys. 1988, 63, 4706
39. Look, D. C.; Stutz, C. E.; Bozada, C. A. Analytical Two-Layer Hall Analysis: Application to Modulation-doped Field-Effect Transistors J. Appl. Phys. 1993, 74, 311-315
40. Arnaudov, B.; Paskova, T.; Evtimova, S.; Valcheva, E.; Heuken, M.; Monemar, B. Multilayer Model for Hall Effect Data Analysis of Semiconductor Structures with Step-Changed Conductivity Phys. Rev. B: Condens. Matter Mater. Phys. 2003, 67, 045314
41. Sule, N.; Knezevic, I. Phonon-Limited Electron Mobility in Graphene Calculated Using Tight-Binding Bloch Waves J. Appl. Phys. 2012, 112, 053702
42. Baltazar, J.; Sojoudi, H.; Paniagua, S. A.; Kowalik, J.; Marder, S. R.; Tolbert, L. M.; Graham, S.; Henderson, C. L. Facile Formation of Graphene P-N Junctions Using Self-Assembled Monolayers J. Phys. Chem. C 2012, 116, 19095-19103
43. Kim, J.; McVittie, J.; Saraswat, K. C.; Nishi, Y.; Liu, S.; Tan, S. Germanium Surface Cleaning with Hydrochloric Acid ECS Trans. 2006, 3, 1191-1196
44. Chan, L. H.; Altman, E. I.; Liang, Y. Development of Procedures for Obtaining Clean, Low-Defect-Density Ge(100) Surfaces J. Vac. Sci. Technol., A 2001, 19, 976-982
45. Hovis, J. S.; Hamers, R. J.; Greenlief, C. M. Preparation of Clean and Atomically Flat Germanium (001) Surfaces Surf. Sci. 1999, 440, L815-L819
46. Oh, J.; Campbell, J. E. Thermal Desorption of Ge Native Oxides and the Loss of Ge from the Surface J. Electron. Mater. 2004, 33, 364-367
47. Rojas Delgado, R.; Cavallo, F.; Lagally, M. G. Kinetics of Ge oxidation in graphene/Ge, unpublished.
48. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669
49. Cavallo, F.; Lagally, M. G. Semiconductors Turn Soft: Inorganic Nanomembranes Soft Matter 2010, 6, 439-455
50. Scott, S. A.; Lagally, M. G. Elastically Strain-Sharing Nanomembranes: Flexible and Transferable Strained Silicon and Silicon-Germanium Alloys J. Phys. D: Appl. Phys. 2007, 40, R75-R92
51. Rogers, J. A.; Lagally, M. G.; Nuzzo, R. G. Semiconductor Nanomembranes: Synthesis, Assembly, and Applications Nature 2011, 477, 45-54