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Volumn 254, Issue 15, 2008, Pages 4828-4832

Oxidation mechanism of hydrogen-terminated Ge(1 0 0) surface

Author keywords

FT IR; Germanium oxide; Layer by layer; Suboxide

Indexed keywords

CHEMICAL BONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM COMPOUNDS; HYDROGEN; OXIDATION;

EID: 42749097894     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.01.114     Document Type: Article
Times cited : (37)

References (15)
  • 1
    • 0003585771 scopus 로고    scopus 로고
    • Introduction to Microelectronic Fabrication
    • R.C. Jaeger Introduction to Microelectronic Fabrication second ed. 2002 Prentice Hall New Jersey
    • (2002)
    • Jaeger, R.C.1
  • 2
    • 0004110976 scopus 로고
    • The Chemistry of Germanium
    • F. Glockling The Chemistry of Germanium 1969 Academic Press, Inc. London
    • (1969)
    • Glockling, F.1
  • 3
    • 0004005306 scopus 로고
    • Physics of Semiconductor Devices
    • S.M. Sze Physics of Semiconductor Devices second ed. 1981 Wiley New York
    • (1981)
    • Sze, S.M.1
  • 10
    • 85120260094 scopus 로고    scopus 로고
    • K. Park, Y. Lee, S. Lim, Appl. Surf. Sci., doi:10.1016/j.apsusc.2007.07.162 .


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.