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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 3, 2001, Pages 976-981

Development of procedures for obtaining clean, low-defect-density Ge(100) surfaces

(3) Chan, L H a Altman, E I a Liang, Y b

a Yale University (United States)

b PACIFIC NORTHWEST NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CARBON; CONTAMINATION; DESORPTION; ETCHING; FILM GROWTH; OXIDATION; SCANNING TUNNELING MICROSCOPY; SPUTTERING; X RAY SPECTROSCOPY;

LOW-DEFECT-DENSITY SURFACES; PLASMA CLEANING;

CRYSTAL STRUCTURE;

EID: 0035334336 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1367264 Document Type: Article

Times cited : (53)

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