Facile formation of graphene P-N junctions using self-assembled monolayers

Journal of Physical Chemistry C

Volumn 116, Issue 36, 2012, Pages 19095-19103

  Baltazar, Jose ^a   Sojoudi, Hossein ^b   Paniagua, Sergio A ^c   Kowalik, Janusz ^c   Marder, Seth R ^c   Tolbert, Laren M ^c   Graham, Samuel ^b   Henderson, Clifford L ^a  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; AMINOPROPYLTRIETHOXYSILANE; COATED SUBSTRATES; DEVICE CHANNEL; DIRAC POINT; FACILE FORMATION; I-V MEASUREMENTS; N-DOPED; P-N JUNCTION;

GRAPHENE; SELF ASSEMBLED MONOLAYERS; SILICON COMPOUNDS;

SEMICONDUCTOR JUNCTIONS;

EID: 84866381703     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3045737     Document Type: Article

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