Charge transport mechanisms of graphene/semiconductor Schottky barriers: A theoretical and experimental study

Journal of Applied Physics

Volumn 115, Issue 1, 2014, Pages

  Zhong, Haijian ^a   Xu, Ke ^a,b   Liu, Zhenghui ^a   Xu, Gengzhao ^a   Shi, Lin ^a   Fan, Yingmin ^a   Wang, Jianfeng ^a,b   Ren, Guoqiang ^a,b   Yang, Hui ^a  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^b Suzhou Nanowin Science and Technology Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSPORT MECHANISMS; CONTACT BARRIER HEIGHT; FERMI-LEVEL SHIFTS; FUTURE APPLICATIONS; INTERFACE SEPARATION; SEMICONDUCTOR ELECTRONICS; THEORETICAL MODELING; TRANSPORT MECHANISM;

ELECTRONIC STRUCTURE; FERMI LEVEL; GRAPHENE; SCHOTTKY BARRIER DIODES;

INTERFACE STATES;

EID: 84892156931     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4859500     Document Type: Conference Paper

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