In situ manipulation of the sub gap states in hydrogenated amorphous silicon monitored by advanced application of Fourier transform photocurrent spectroscopy

Solar Energy Materials and Solar Cells

Volumn 129, Issue , 2014, Pages 70-81

  Melskens, J ^a   Schouten, M ^a   Santbergen, R ^a   Fischer, M ^a   Vasudevan, R ^a   Van Der Vlies, D J ^a   Quax, R J V ^b   Heirman, S G M ^a   Jager K ^a   Demontis, V ^c   Zeman, M ^a   Smets, A H M ^a  

^a Department of Microelectronics   (Netherlands)

^b HyET Solar BV   (Netherlands)

^c Cluster Tecnologico Energie Rinnovabili Sardegna Ricerche   (Italy)

Author keywords

Defects; Fourier transform photocurrent spectroscopy (FTPS); Hydrogenated amorphous silicon (a Si:H); In situ annealing; In situ light soaking; Staebler Wronski effect (SWE)

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS SILICON; ANNEALING; DEFECTS; HYDROGENATION; SOLAR CELLS;

HYDROGENATED AMORPHOUS SILICON (A-SI:H); IN-SITU ANNEALING; LIGHT SOAKING; PHOTOCURRENT SPECTROSCOPY; STAEBLER-WRONSKI EFFECT;

SILICON;

EID: 84906324619     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2014.03.022     Document Type: Article

References (41)

1. D.L. Staebler, and C.R. Wronski Reversible conductivity changes in discharge-produced amorphous Si Appl. Phys. Lett. 31 4 1977 292 294
2. D.L. Staebler, and C.R. Wronski Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon J. Appl. Phys. 51 6 1980 3262 3268 (Pubitemid 11441235)
3. C.R. Wronski, and R.E. Daniel Photoconductivity, trapping, and recombination in discharge-produced, hydrogenated amorphous silicon Phys. Rev. B 23 2 1981 794 804
4. W.B. Jackson, and N.M. Amer Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy Phys. Rev. B 25 8 1982 5559 5562
5. A.V. Gelatos, K.K. Mahavadi, J.D. Cohen, and J.P. Harbison Transient photocapacitance and photocurrent studies of undoped hydrogenated amorphous silicon Appl. Phys. Lett. 53 5 1988 403 405
6. N. Wyrsch, F. Finger, T.J. McMahon, and M. Vaněček How to reach more precise interpretation of subgap absorption spectra in terms of deep defect density in a-Si:H J. Non-Cryst. Solids 137-138 1991 347 350
7. P. Stradins, and H. Fritzsche Photo-induced creation of metastable defects in a-Si:H at low temperatures and their effect on the photoconductivity Philos. Mag. B 69 1 1994 121 139
8. M. Güneş, C.R. Wronski, and T.J. McMahon Charged defect states in intrinsic hydrogenated amorphous silicon films J. Appl. Phys. 76 4 1994 2260 2263
9. J.D. Cohen, and D. Kwon Identification of the dominant electron deep trap in amorphous silicon from ESR and modulated photocurrent measurements: implications for defect models J. Non-Cryst. Solids 227-230 1998 348 352 (Pubitemid 128427137)
10. G. van Elzakker, V. Nádaždy, F.D. Tichelaar, J.W. Metselaar, and M. Zeman Analysis of structure and defects in thin silicon films deposited from hydrogen diluted silane Thin Solid Films 511-512 2006 252 257 (Pubitemid 44250864)
11. J. Melskens, G. van Elzakker, Y. Li, and M. Zeman Analysis of hydrogenated amorphous silicon thin films and solar cells by means of Fourier transform photocurrent spectroscopy Thin Solid Films 516 20 2008 6877 6881
12. M. Vaněček, J. Kočka, J. Stuchlík, and A. Tříska Direct measurement of the gap states and band tail absorption by constant photocurrent method in amorphous silicon Solid State Commun. 39 11 1981 1199 1202 (Pubitemid 12439472)
13. C.R. Wronski, B. Abeles, T. Tiedje, and C.D. Cody Recombination centers in phosphorus doped hydrogenated amorphous silicon Solid State Commun. 44 10 1982 1423 1426 (Pubitemid 13487060)
14. M. Vaněček, and A. Poruba Fourier-transform photocurrent spectroscopy of microcrystalline silicon for solar cells Appl. Phys. Lett. 80 5 2002 719 721
15. J. Holovský Fourier Transforms - New Analytical approaches and FTIR strategies G. Nikolić, 2011 InTech. 257 282 (available from: http://www.intechopen.com/books/fourier-transforms-new-analytical-approaches- and-ftir-strategies/fourier-transform-photocurrent-spectroscopy-on-non- crystalline-semiconductors)
16. R. Santbergen, A.H.M. Smets, and M. Zeman Optical model for multilayer structures with coherent, partly coherent and incoherent layers Opt. Express 21 S2 2013 A262 A267
17. R. Das, T. Jana, and S. Ray Degradation studies of transparent conducting oxide: a substrate for microcrystalline silicon thin film solar cells Sol. Energy Mater. Sol. Cells 86 2005 207 216
18. W. Beyer, J. Hüpkes, and H. Stiebig Transparent conducting oxide films for thin film silicon photovoltaics Thin Solid Films 516 2-4 2007 147 154 (Pubitemid 350110588)
19. V. Demontis, C. Sanna, J. Melskens, R. Santbergen, A.H.M. Smets, A. Damiano, and M. Zeman The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells J. Appl. Phys. 113 2013 064508
20. K. Jäger, M. Fischer, R.A.C.M.M. van Swaaij, and M. Zeman A scattering model for nano-textured interfaces and its application in opto-electrical simulations of thin-film silicon solar cells J. Appl. Phys. 111 2012 083108
21. N. Wyrsch, A. Shah, Degradation of a-Si:H solar cells: new evidence for a bulk effect, in: Proceedings of the 24th IEEE Photovoltaic Specialists Conference, vol. 1, Waikoloa, HI, USA, 1994, pp. 583-586.
22. D. Ritter, and K. Weiser Suppression of interference fringes in absorption measurements on thin films Opt Commun. 57 5 1986 336 338 (Pubitemid 16531995)
23. M. Born, and E. Wolf Principles of Optics 7th ed. 1999 Cambridge University Press 54-74
24. J. Melskens, A.H.M. Smets, M. Schouten, S.W.H. Eijt, H. Schut, and M. Zeman New insights in the nanostructure and defect states of hydrogenated amorphous silicon obtained by annealing IEEE J. Photovolt. 3 1 2013 65 71
25. H. Fritzsche Characterisation of glow-discharge deposited a-Si:H Sol. Energy Mater. 3 1980 447 501
26. I. Solomon, and M.H. Brodsky Thickness dependence of the photoconductivity of phosphorus-doped hydrogenated amorphous silicon J. Appl. Phys. 51 1980 4548 4549
27. J. Holovský, U. Dagkaldiran, Z. Remeš, A. Purkrt, T. Ižák, A. Poruba, and M. Vaněček Fourier transform photocurrent measurement of thin silicon films on rough, conductive and opaque substrates Phys. Status Solidi (A) 207 3 2010 578 581
28. S. Wiedeman, M.S. Bennett, and J.L. Newton Method for the reduction of photothermal deflection spectroscopy data taken on amorphous silicon (a-Si:H) Mater. Res. Soc. Symp. Proc. 95 1987 145 150
29. X. Niu Nature and evolution of light induced defects in hydrogenated amorphous silicon Ph.D. thesis 2006 Pennsylvania State University, State College PA, USA
30. L. Jiao, and C.R. Wronski Characterisation of gap defect states in hydrogenated amorphous silicon materials Mater. Res. Soc. Symp. Proc. 1066 2008 (A04-05-01-A04-05-06)
31. A.H.M. Smets, C.R. Wronski, M. Zeman, and M.C.M. van de Sanden The Staebler-Wronski effect: new physical approaches and insights as a route to reveal its origin Mater. Res. Soc. Symp. Proc. 1245 2010 (A14-02-01-A14-02-06)
32. H.W. Engl, M. Hanke, and A. Neubauer Regularization of Inverse Problems 1996 Kluwer Academic Publishers Group Dordrecht 4-7
33. S. Lu, and S.V. Pereverzev Numerical differentiation from a viewpoint of regularization theory Math. Comput. 75 256 2006 1853 1870 (Pubitemid 44719734)
34. F. Zhang, and J.D. Cohen Measured and calculated distributions of deep defect states in hydrogenated amorphous silicon: verification of deep defect relaxation dynamics Phys. Rev. Lett. 71 4 1993 597 600
35. V. Nádaždy, and M. Zeman Origin of charged gap states in a-Si:H and their evolution during light soaking Phys. Rev. B 69 16 2004 165213
36. J.A. Willemen Modelling of amorphous silicon single- and multi-junction solar cells, Ph.D. Thesis 1998 Delft University of Technology Delft, The Netherlands
37. H. Fritzsche Development in understanding and controlling the Staebler-Wronski effect in a-Si:H Annu. Rev. Mater. Res. 31 2001 47 79 (and references therein) (Pubitemid 33080522)
38. T. Shimizu Staebler-Wronski effect in hydrogenated amorphous silicon and related alloy films Jpn. J. Appl. Phys. 43 6A 2004 3257 3268 (and references therein)
39. M. Stutzmann, W.B. Jackson, and C.C. Tsai Light-induced metastable defects in hydrogenated amorphous silicon: a systematic study Phys. Rev. B 32 1 1985 23 47
40. B. Ross, J. Deng, M.L. Albert, R.W. Collins, C.R. Wronski, Evolution of metastable defects in intrinsic layers of a-Si:H solar cells and corresponding thin film materials characterized by carrier recombination through midgap states, in: Proceedings of the Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, vol. 2, Waikoloa, Hawaii, USA, 2006, pp. 1576-1579. (Pubitemid 351485309)
41. M.S. Bennett, J.L. Newton, and K. Rajan Kinetic studies of the annealing behavior of a-Si:H p-i-n solar cells J. Appl. Phys. 62 9 1987 3968 3975 (and references therein)