Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growth

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Smets, A H M ^a   Kessels, W M M ^a   Van De Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIFFUSION; ION BOMBARDMENT; METALLIC FILMS; MOLECULAR DYNAMICS; PLASMAS; SURFACE ROUGHNESS;

NANOSIZED VOIDS; OPTICAL LOSSES; SURFACE DIFFUSION;

AMORPHOUS SILICON;

EID: 13744262311     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1853508     Document Type: Article

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