The limited relevance of SWE dangling bonds to degradation in high-quality a-Si:H solar cells

IEEE Journal of Photovoltaics

Volumn 4, Issue 3, 2014, Pages 778-784

  Wronski, Christopher R ^a   Niu, Xinwei ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Chint Solar (Zhejiang) Co Ltd   (China)

Author keywords

Amorphous silicon; defect states; light induced degradation; photovoltaic cells; thin films

Indexed keywords

AMORPHOUS SILICON; DEFECTS; DEGRADATION; ELECTRONS; PHOTOVOLTAIC CELLS; SILICON; THIN FILMS;

A-SI:H SOLAR CELLS; CARRIER RECOMBINATION; DEFECT STATE; DEGRADATION KINETICS; HOLE RECOMBINATION; LIGHT INDUCED DEFECTS; LIGHT-INDUCED CHANGES; LIGHT-INDUCED DEGRADATION;

SOLAR CELLS;

EID: 84899992223     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2014.2311498     Document Type: Article

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