The staebler-wronski effect: New physical approaches and insights as a route to reveal its origin

Materials Research Society Symposium Proceedings

Volumn 1245, Issue , 2010, Pages 303-308

  Smets, A H M ^a,b,d   Wronski, C R ^c   Zeman, M ^d   Van De Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; HYDROGEN; HYDROGEN BONDS; HYDROGENATION;

BONDED HYDROGEN; DIVACANCIES; EXPERIMENTAL EVIDENCE; HYDROGENATED AMORPHOUS SILICON (A-SI:H); METASTABLE DEFECT; PHYSICAL APPROACHES; STAEBLER-WRONSKI EFFECT;

AMORPHOUS SILICON;

EID: 78650395481     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1245-a14-02     Document Type: Conference Paper

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