20.7% efficient ion-implanted large area n-type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition

Progress in Photovoltaics: Research and Applications

Volumn 22, Issue 10, 2014, Pages 1030-1039

  Tao, Yuguo ^a   Payne, Adam ^b   Upadhyaya, Vijaykumar D ^a   Rohatgi, Ajeet ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Suniva Inc   (United States)

Author keywords

Annealing; Laser pulse energy; N type wafer; Pitch; Plasma etching; PVD

Indexed keywords

ALUMINUM COATINGS; ANNEALING; LASER PULSES; LOW-K DIELECTRIC; PASSIVATION; PHYSICAL VAPOR DEPOSITION; PLASMA ETCHING; POINT CONTACTS; SILICA; SILICON OXIDES; SILICON WAFERS; TEMPERATURE; ULTRAVIOLET LASERS;

BACK SURFACE FIELDS; CZOCHRALSKI WAFERS; LASER-PULSE ENERGY; LOW TEMPERATURE ANNEALING; PATTERNED DIELECTRIC; PITCH; SURFACE PASSIVATION; THERMALLY GROWN OXIDE;

SILICON SOLAR CELLS;

EID: 84908028611     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2545     Document Type: Article

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