Fully ion-implanted and screen-printed 20.2% efficient front junction silicon cells on 239 cm 2 n-type cz substrate

IEEE Journal of Photovoltaics

Volumn 4, Issue 1, 2014, Pages 58-63

  Tao, Yuguo ^a   Ok, Young Woo ^a   Zimbardi, Francesco ^a   Upadhyaya, Ajay D ^a   Lai, Jiun Hong ^a   Ning, Steven ^a   Upadhyaya, Vijaykumar D ^a   Rohatgi, Ajeet ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Suniva Inc   (United States)

Author keywords

Back surface field (BSF); ion implantation; n type wafer; planarization; screen printed

Indexed keywords

AVERAGE EFFICIENCIES; BACKSURFACE FIELD; CZOCHRALSKI WAFERS; HIGH-EFFICIENCY; N-TYPE WAFER; PLANARIZATION; SCREEN-PRINTED; SURFACE PASSIVATION;

ION IMPLANTATION; OPTIMIZATION; SILICON NITRIDE;

EFFICIENCY;

EID: 84891555331     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2281106     Document Type: Article

References (15)

1. R. Low, A. Gupta, N. Bateman, D. Ramappa, P. Sullivan, W. Skinner, J. Mullin, S. Peters, and H. Weiss-Wallrath, "High efficiency selective emitter enabled through patterned ion implantation," presented at the 35th IEEE Photovoltaic Specialist Conf., Honolulu, HI, USA, 2010.
2. A. Rohagti, D. Meier, B. Mcperson, Y. Ok, A. D. Upadhyaya, J. Lai, and F. Zimbardi, "High-throughput ion-implantation for low-cost highefficiency silicon solar cells," Energy Procedia, vol. 15, pp. 10-19, 2012.
3. M. Hermle, J. Benick, M. R̈udiger, N. Bateman, and S. W. Glunz, "Ntype silicon solar cells with implanted emitter," presented at the 26th Eur. Photovoltaic Solar Energy Conf., Hamburg, Germany, Sep. 2011.
4. D. L. Meier, V. Chandrasekaran, H. P. Davis, A. M. Payne, X. Wang, V. Yelundur, J. E. O'Neill, Y. Ok, F. Zimbardi, and A. Rohatgi, "N-type, ion-implanted silicon solar cells and modules," IEEE J. Photovoltaics, vol. 1, no. 2, pp. 123-129, Oct. 2011.
5. D. Macdonald and L. J. Geerligs, "Recombination activity of interstitial iron and other transition metal point defects in p-and n-type crystalline silicon," Appl. Phys. Lett., vol. 85, pp. 4061-4063, 2004.
6. S. W. Glunz, S. Rein, J. Y. Lee, and W. Warta, "Minority carrier lifetime degradation in boron-doped Czochralski silicon," J. Appl. Phys., vol. 90, pp. 2397-404, 2001. (Pubitemid 33600658)
7. J. Benick, R. M̈uller, N. Bateman, M. Hermle, and S. W. Glunz, "Fully implanted n-type PERT solar cells," presented at the 27th Eur. Photovoltaic Solar Energy Conf., Frankfurt, Germany, Sep. 2012.
8. B. Hoex, J. Schmidt, R. Bock, P. P. Altermatt, M. C. M. van de Sanden, and W. M. M. Kessels, "Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2 O3," J. Appl. Phys., vol. 91, pp. 112107-1-112107-3, 2007.
9. J. Benick, B. Hoex, M. C. M. van de Sanden, W. M. M. Kessels, O. Schultz, and S. W. Glunz, "High efficiency n-type Si solar cells on Al2O3-passivated boron emitters," J. Appl. Phys., vol. 92, pp. 253504-1-253504-3, 2008.
10. G. Dingemans, P. Engelhart, R. Seguin, F. Einsele, B. Hoex,M. C. M. van de Sanden, and W. M. M. Kessels, "Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon," J. Appl. Phys., vol. 106, pp. 114907-1-114907-4, 2009.
11. P. Saint-Cast, A. Richter, E. Billot, M. Hofmann, J. Benick, J. Rentsch, R. Preu, and S. W. Glunz, "Very low surface recombination velocity of boron doped emitter passivated with plasma-enhanced chemical-vapordeposited AlOx layers," Thin Solid Films, vol. 522, pp. 336-339, 2012.
12. J. Lai, A. Upadhyaya, S. Ramanathan, A. Das, K. Tate, V. Upadhyaya, A. Kapoor, C. Chen, and A. Rohatgi, "High-efficiency large-area rear passivated silicon solar cells with local Al-BSF and screen-printed contacts," IEEE J. Photovoltaics, vol. 1, no. 1, pp. 16-21, Jul. 2011.
13. Y. W. Ok, A. D. Upadhyaya, Y. Tao, F. Zimbardi, S. Ning, and A. Rohatgi, "Ion-implanted and screen-printed large area 19.6% efficient n-type bifacial Si solar cells," presented at the 37th IEEE Photovoltaic Specialist Conf., Austin, TX, USA, 2012.
14. K. Ryu, A. Upadhyaya, H. Song, C. Choi, A. Rohatgi, and Y. Ok, "Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells," Appl. Phys. Lett., vol. 101, pp. 073902-1-073902-4, 2012.
15. R. A. Sinton, A. Cuevas, and M. Stuckings, "Quasi-steady-state photoconductance, a new method for solar cell material and device characterization," presented at the 25th IEEE Photovoltaic Specialist Conf., Washington, DC, USA, 1996.