Aluminum-based rear-side PVD metallization for nPERT silicon solar cells

IEEE Journal of Photovoltaics

Volumn 4, Issue 1, 2014, Pages 160-167

  Katkhouda, Kamal ^a,b   Martinez Limia, Alberto ^c   Bornschein, Lutz ^a   Koseva, Radinka ^a   Geppert, Torsten ^a   Grohe, Andreas ^a   Krokoszinski, Hans Joachim ^a   Schaaf, Peter ^b  

^a Bosch Solar Energy   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^c ROBERT BOSCH GMBH   (Germany)

Author keywords

Metallization; physical vapor deposition (PVD); rear totally diffused (PERT); silicon solar cell

Indexed keywords

BARRIER METALLIZATION; CONTACT FORMATION; DEGRADATION OF CELL PERFORMANCE; DOPING PROFILES; INFRARED WAVELENGTHS; REAR TOTALLY DIFFUSED (PERT); SPECIFIC CONTACT RESISTANCES; THERMAL-ANNEALING;

DEPOSITION; METALLIZING; PHYSICAL VAPOR DEPOSITION; SILICON SOLAR CELLS; VAPORS;

ALUMINUM;

EID: 84891557184     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2288018     Document Type: Article

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