Ion-implanted and screen-printed large area 19.6% efficient n-type bifacial Si solar cell

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 2240-2243

  Ok, Young Woo ^a   Upadhyaya, Ajay D ^a   Tao, Yugou ^a   Zimbardi, Francesco ^a   Ning, Steven ^a   Rohatgi, Ajeet ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Suniva Inc   (United States)

Author keywords

bifacial solar cell; boron emitter; ion implantation; n type; screen printing

Indexed keywords

BIFACIAL CELL; BIFACIAL SOLAR CELLS; CELL ANALYSIS; EMITTER SATURATION CURRENT DENSITY; N-TYPE; PERFORMANCE LIMITING FACTOR; SATURATION CURRENT DENSITIES; SCREEN-PRINTED; SI SOLAR CELLS;

BORON; ION IMPLANTATION; METALLIZING; PHOSPHORUS; SCREEN PRINTING; SILICON NITRIDE;

SILICON SOLAR CELLS;

EID: 84869381237     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6318042     Document Type: Conference Paper

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