New simplified methods for patterning the rear contact of RP-PERC high-efficiency solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 168-171

  Glunz, S W ^a   Preu, R ^a   Schaefer, S ^a   Schneiderlochner E ^a   Pfleging, W ^b   Ludemann R ^a   Willeke, G ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; LASER BEAMS; PASSIVATION; PLASMA ETCHING; SILICON NITRIDE; SILICON SOLAR CELLS; SOLAR CELLS; WET ETCHING;

DIELECTRIC LAYER; FRONT STRUCTURES; HIGH POTENTIAL; HIGH-EFFICIENCY SOLAR CELLS; HIGHER EFFICIENCY; PASSIVATION LAYER; PLASMA PROCESS; SIMPLIFIED METHOD;

SILICON OXIDES;

EID: 84949546945     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915780     Document Type: Conference Paper

References (9)

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9. R. Preu and S. Glunz, Patent pending, 1999.