Electron inversion layer mobility in strained-Si n-MOSFETs with high channel doping concentration achieved by ion implantation

Device Research Conference - Conference Digest, DRC

Volumn 2002-January, Issue , 2002, Pages 43-44

  Nayfeh, H M ^a   Hoyt, J L ^a   Leitz, C W ^a   Pitera, A J ^a   Fitzgerald, E A ^a   Antoniadis, D A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Boron; Dielectric substrates; Doping; Electron mobility; Implants; Ion implantation; Materials science and technology; MOSFET circuits; Temperature; Threshold voltage

Indexed keywords

BORON; DENTAL PROSTHESES; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRON MOBILITY; INVERSION LAYERS; ION IMPLANTATION; IONS; SILICON; TEMPERATURE; THRESHOLD VOLTAGE;

BORON ION IMPLANTATION; DIELECTRIC SUBSTRATES; HIGH TEMPERATURE; MATERIALS SCIENCE AND TECHNOLOGY; MOBILITY ENHANCEMENT; MOBILITY MEASUREMENTS; MOBILITY RELATIONSHIPS; MOSFET CIRCUITS;

MOSFET DEVICES;

EID: 2342595760     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2002.1029497     Document Type: Conference Paper

References (5)

1. K. Rim, J. L. Hoyt, J. F. Gibbons, "Fabrication and Analysis of Deep Submicron Strained-Si n-MOSFET's, IEEE Transactions on Electron Devices, Vol. 47, No. 7, July 2000.
2. J. Welser, J. L. Hoyt, J. F. Gibbons, "Electron Mobility Enhancement in Strained-Si n-Type Metal-Oxide-Semiconductor Field-Effect Transistors", IEEE Electron Device Letters, Vol. 15, No. 3, March 1994, p. 100-102.
3. S. Takagi, A. Toriumi, M. Iwase, H. Tango, "On the Universality of the Inversion Layer Mobility in Si MOSFET's: Part I- Effects of Substrate Impurity Concentration" IEEE Transactions on Electron Devices, Vol. 41, No. 12, Dec. 1994.
4. E. A. Fitzgerald, "GeSi/Si Nanostructures", Annu. Rev. Mater. Sci. 1994: 417-54.
5. C. G. Sodini, T. W. Ekstedt, J. L. Moll, "Charge accumulation and mobility in thin dielectric MOS transistors" Solid-State Electronics, Vol. 25, No. 9, 1982, p. 833