Resistance switching induced by hydrogen and oxygen in diamond-like carbon memristor

IEEE Electron Device Letters

Volumn 35, Issue 10, 2014, Pages 1016-1018

  Chen, Yi Jiun ^a   Chang, Kuan Chang ^a   Chang, Ting Chang ^a   Chen, Hsin Lu ^a   Young, Tai Fa ^a   Tsai, Tsung Ming ^a   Zhang, Rui ^b   Chu, Tian Jian ^a   Ciou, Jian Fa ^a   Lou, Jen Chung ^b   Chen, Kai Huang ^c   Chen, Jung Hui ^d   Zheng, Jin Cheng ^e   Sze, Simon M ^f  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b PEKING UNIVERSITY   (China)

^c TUNG FANG DESIGN UNIVERSITY   (Taiwan)

^d NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

^e XIAMEN UNIVERSITY   (China)

^f Stanford University   (United States)

Author keywords

DLC; HfO2; Hydrogen; Oxygen; RRAM

Indexed keywords

OXYGEN;

DIAMOND-LIKE CARBON; DLC; HFO2; MEMRISTOR; RESISTANCE SWITCHING; RRAM;

HYDROGEN;

EID: 84907657591     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2343331     Document Type: Article

References (18)

1. S. Long et al., "A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown," IEEE Electron Device Lett., vol. 34, no. 8, pp. 999-1001, Aug. 2013.
2. T. C. Chang et al., "Developments in nanocrystal memory," Mater. Today, vol. 14, no. 12, pp. 608-615, Dec. 2011.
3. S. Yu and H.-S. P. Wong, "A phenomenological model for the reset mechanism of metal oxide RRAM," IEEE Electron Device Lett., vol. 31, no. 12, pp. 1455-1457, Dec. 2010.
4. K. C. Chang et al., "Origin of hopping conduction in graphene-oxidedoped silicon oxide resistance random access memory devices," IEEE Electron Device Lett., vol. 34, no. 5, pp. 677-679, May 2013.
5. Q. Liu et al., "Improvement of resistive switching properties in ZrO2- based ReRAM with implanted Ti ions," IEEE Electron Device Lett., vol. 30, no. 12, pp. 1335-1337, Dec. 2009.
6. T.-M. Tsai et al., "Performance and characteristics of double layer porous silicon oxide resistance random access memory," Appl. Phys. Lett., vol. 102, no. 25, p. 253509, 2013.
7. Z. Zhang et al., "Nanometer-scale HfOx RRAM," IEEE Electron Device Lett., vol. 34, no. 8, pp. 1005-1007, Apr. 2013.
8. S. Long et al., "Cycle-to-cycle intrinsic RESET statistics in HfO2-based unipolar RRAM devices," IEEE Electron Device Lett., vol. 34, no. 4, pp. 623-625, May 2013.
9. M. F. Hung, Y. C. Wu, and Z. Y. Tang, "High-performance gateall- around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory," Appl. Phys. Lett., vol. 98, no. 16, pp. 162108-1-162108-3, Apr. 2011.
10. K. C. Chang et al., "Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process," Appl. Phys. Lett., vol. 103, no. 8, p. 083509, 2013.
11. B. Lee and H.-S. P.Wong, "Fabrication and characterization of nanoscale NiO resistance change memory (RRAM) cells with confined conduction paths," IEEE Trans. Electron Devices, vol. 58, no. 10, pp. 3270-3275, Oct. 2011.
12. C. Yang et al., "Nanoscale bipolar and complementary resistive switching memory based on amorphous carbon," IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3933-3939, Nov. 2011.
13. A. Sebastian et al., "Resistance switching at the nanometre scale in amorphous carbon," New J. Phys., vol. 13, p. 013020, Jan. 2011.
14. S. Qin et al., "A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion," Nanoscale, vol. 4, no. 20, pp. 6658-6663, Oct. 2012
15. Y. J. Chen et al., "Hydrogen induced redox mechanism in amorphous carbon resistive random access memory," Nanoscale Res. Lett., vol. 9, no. 1, p. 52, 2014.
16. Y. E. Syu et al., "Atomic-level quantized reaction of HfOx memristor," Appl. Phys. Lett., vol. 102, no. 17, p. 172903, 2013.
17. S. M. Sze, Physics of Semiconductor Devices, 3rd ed. Hoboken, NJ, USA: Wiley, 2007.
18. D. Ielmini and Y. Zhang, "Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices," J. Appl. Phys., vol. 102, no. 5, p. 054517, 2007.