Fabrication and characterization of nanoscale NiO resistance change memory (RRAM) cells with confined conduction paths

IEEE Transactions on Electron Devices

Volumn 58, Issue 10, 2011, Pages 3270-3275

  Lee, Byoungil ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

Metal oxide memory; nanoscale memory cell; nickel oxide (NiO) thin film; resistance change memory (RRAM, ReRAM); Resistive memory; RRAM characterization

Indexed keywords

METAL-OXIDE; NANO SCALE; RESISTANCE CHANGE MEMORY (RRAM, RERAM); RESISTIVE MEMORY; RRAM CHARACTERIZATION;

FABRICATION; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; NICKEL OXIDE; SEMICONDUCTOR STORAGE; THIN FILMS;

RANDOM ACCESS STORAGE;

EID: 80053197764     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2161311     Document Type: Article

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