Effect of wettability on the agglomeration of silicon nanowire arrays fabricated by metal-assisted chemical etching

Langmuir

Volumn 30, Issue 34, 2014, Pages 10290-10298

  Togonal, A S ^a,b,c   He, Lining ^a   Roca I Cabarrocas, Pere ^c   Rusli, ^a,b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b RESEARCH TECHNO PLAZA   (Singapore)

^c LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ETCHING; NANOWIRES; SILICON WAFERS; WETTING;

DENSE ARRAYS; DETAILED BALANCE; METAL-ASSISTED CHEMICAL ETCHING; POST TREATMENT; PRE-TREATMENT; SILICON NANOWIRE ARRAYS; SILICON NANOWIRES; WAFER SUBSTRATES;

FABRICATION;

EID: 84906871692     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la501768f     Document Type: Article

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