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Japanese Journal of Applied Physics

Volumn 49, Issue 7 PART 1, 2010, Pages 0750021-0750027

Properties of Si nanowires synthesized by galvanic cell reaction

(2) Kobayashi, Yasushi a Adachi, Sadao a

a GUNMA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION RANGES; FAR-INFRARED; GALVANIC CELLS; HF ETCHING; HF SOLUTIONS; INTERBAND; OPTICAL ABSORPTION; PHOTOLUMINESCENCE SPECTRUM; PL EMISSION; ROUGHENED SURFACES; SI NANOWIRE; SPECTRAL REGION; SUPERHYDROPHOBIC; SURFACE OXIDE; TRANSITION REGIONS; WELL-ALIGNED;

INFRARED SPECTROSCOPY; LEAD OXIDE; NANOWIRES;

ABSORPTION SPECTROSCOPY;

EID: 77956556858 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.075002 Document Type: Article

Times cited : (6)

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