Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Journal of Crystal Growth

Volumn 404, Issue , 2014, Pages 246-255

  Matteini, Federico ^a   Tütüncüoʇlu, Gözde ^a   Rüffer, Daniel ^a   Alarcón Lladó, Esther ^a   Fontcuberta I Morral, Anna ^a  

^a EPFL   (Switzerland)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Semiconducting gallium arsenide

Indexed keywords

GAAS NANOWIRES;

EID: 84905996830     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2014.07.034     Document Type: Article

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