Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages 1-9

  Li, Ming Yu ^a   Hirono, Yusuke ^b   Koukourinkova, Sabina D ^b   Sui, Mao ^a   Song, Sangmin ^a   Kim, Eun Soo ^a   Lee, Jihoon ^a,b   Salamo, Gregory J ^b  

^a Kwangwoon University   (South Korea)

^b UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SURFACE ROUGHNESS;

CONTROL OF SIZE; DROPLET EPITAXY; ENERGY DISPERSIVE X-RAY SPECTROMETRY; HIGH-RESOLUTION SCANNING ELECTRON MICROSCOPES; LINE PROFILE ANALYSIS; ROOT MEAN SQUARE ROUGHNESS; SHARP CONTRAST; SYSTEMATIC VARIATION;

DROPS;

EID: 84871004560     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-550     Document Type: Article

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