Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD

Journal of Crystal Growth

Volumn 395, Issue , 2014, Pages 55-60

  Wang, Xiaoye ^a   Yang, Xiaoguang ^a   Du, Wenna ^a   Ji, Haiming ^a   Luo, Shuai ^a   Yang, Tao ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Nanowires; A1. Self catalyst; A2. Parasitic islands; A3. Metalorganic chemical vapor deposition; B1. InAs; B1. Thermal oxide layer

Indexed keywords

CATALYSIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; SUBSTRATES; VAPORS;

A2. PARASITIC ISLANDS; DIFFUSION LENGTH; INAS; MORPHOLOGICAL CHARACTERISTIC; SELF-CATALYST; SI(111) SUBSTRATE; THERMAL OXIDE LAYER; UNIFORM DISTRIBUTION;

SILICON;

EID: 84897418477     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2014.03.011     Document Type: Article

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