Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces

Semiconductors

Volumn 45, Issue 4, 2011, Pages 431-435

  Samsonenko, Yu B ^a,b,c   Cirlin, G E ^a,b,c   Khrebtov, A I ^b   Bouravleuv, A D ^b,c   Polyakov, N K ^a,b,c   Ulin, V P ^c   Dubrovskii, V G ^b,c   Werner, P ^d  

^a INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^b ST PETERSBURG ACADEMIC UNIVERSITY   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79954998537     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782611040191     Document Type: Article

References (17)

1. F. Glas, Phys. Rev. B 74, 121 (302) (2006).
2. L. C. Chuang, M. Moewe, S. Crankshaw, and C. Chang-Hasnain, Appl. Phys. Lett. 92, 013121 (2008).
3. G. E. Cirlin, V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, Yu. B. Samsonenko, A. D. Bouravleuv, J. C. Harmand, and F. Glas, Phys. Status Solidi RRL 3(4), 112 (2009).
4. M. Moewe, L. C. Chuang, V. G. Dubrovskii, and C. Chang-Hasnain, J. Appl. Phys. 104, 044313 (2008).
5. A. Fontcuberta i Morral, C. Colombo, and G. Abstreiter, Appl. Phys. Lett. 92, 063112 (2008).
6. G. E. Cirlin, V. G. Dubrovskii, Yu. B. Samsonenko, A. D. Bouravleuv, K. Durose, Y. Y. Proskuryakov, Budhikar Mendes, L. Bowen, M. A. Kaliteevski, R. A. Abram, and Dagou Zeze, Phys. Rev. B 82, 035302 (2010).
7. M. Mattila, T. Hakkarainen, and H. Lipsanen, Appl. Phys. Lett. 89, 063119 (2006).
8. M. Moewe, L. C. Chuang, S. Crankshow, C. Chase, and C. Chang-Hasnain, Appl. Phys. Lett. 93, 023116 (2008).
9. V. G. Dubrovskii, G. E. Cirlin, and V. M. Ustinov, Fiz. Tekh. Poluprovodn. 43, 1585 (2009) [Semiconductors 43, 1539 (2009)].
10. A. I. Persson, M. W. Larsson, S. Stengstrom, B. J. Ohlsson, L. Samuelson, and L. R. Wallenberg, Nature Mater. 3, 677 (2004).
11. I. P. Soshnikov, G. E. Cirlin, A. A. Tonkikh, Yu. B. Samsonenko, V. G. Dubrovskii, V. M. Ustinov, O. M. Gorbenko, D. Litvinov, and D. Gerthsen, Fiz. Tverd. Tela 47, 2121 (2005) [Phys. Solid State 47, 2213 (2005)].
12. J. C. Harmand, G. Patriarche, N. Péré-Laperne, M.-N. Mérat-Combes, L. Travers, and F. Glas, Appl. Phys. Lett. 87, 203101 (2005).
13. V. G. Dubrovskii, G. E. Cirlin, I. P. Soshnikov, A. A. Tonkikh, N. V. Sibirev, Yu. B. Samsonenko, and V. M. Ustinov, Phys. Rev. B 71, 205325 (2005).
14. G. E. Cirlin, V. G. Dubrovskii, N. V. Sibirev, I. P. Soshnikov, Yu. B. Samsonenko, A. A. Tonkikh, and V. M. Ustinov, Fiz. Tekh. Poluprovodn. 39, 587 (2005) [Semiconductors 39, 547 (2005)].
15. F. Glas, J. C. Harmand, and G. Patriarche, Phys. Rev. Lett. 99, 146101 (2007).
16. V. G. Dubrovskii, N. V. Sibirev, J. C. Harmand, and F. Glas, Phys. Rev. B 78, 235301 (2008).
17. J. Johansson, L. S. Karlsson, K. A. Dick, J. Bolinsson, B. A. Wacaser, K. Deppert, and L. Samuelson, Cryst. Growth Design 9, 766 (2009).