Opportunities and pitfalls in patterned self-catalyzed GaAs nanowire growth on silicon

Semiconductor Science and Technology

Volumn 28, Issue 10, 2013, Pages

  Gibson, Sandra J ^a   Boulanger, Jonathan P ^a   Lapierre, Ray R ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDE THICKNESS VARIATIONS; PATTERN TRANSFERS; PATTERNING METHODS; PATTERNING PROCESS; PERIODIC ARRAYS; RESIDUAL LAYERS; SELF-CATALYZED; SELF-CATALYZED GROWTH;

GALLIUM ARSENIDE; GAS SOURCE MOLECULAR BEAM EPITAXY; NANOWIRES; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

CATALYSIS;

EID: 84884833659     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/10/105025     Document Type: Article

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