-
1
-
-
0037666297
-
Low dielectric constant materials for microelectronics
-
Maex, K.; Baklanov, M. R.; Shamiryan, D.; Iacopi, F.; Brongersma, S. H.; Yanovitskaya, Z. S. Low dielectric constant materials for microelectronics J. Appl. Phys. 2003, 11, 8793-8841
-
(2003)
J. Appl. Phys.
, vol.11
, pp. 8793-8841
-
-
Maex, K.1
Baklanov, M.R.2
Shamiryan, D.3
Iacopi, F.4
Brongersma, S.H.5
Yanovitskaya, Z.S.6
-
2
-
-
32944459861
-
Materials Chemistry for low- k Materials
-
Hatton, B. D.; Landskron, K.; Hunks, W. J.; Bennett, M. R.; Shukaris, D.; Perovic, D. D.; Ozin, G. A. Materials Chemistry for low- k Materials Mater. Today 2006, 9, 22-31
-
(2006)
Mater. Today
, vol.9
, pp. 22-31
-
-
Hatton, B.D.1
Landskron, K.2
Hunks, W.J.3
Bennett, M.R.4
Shukaris, D.5
Perovic, D.D.6
Ozin, G.A.7
-
3
-
-
84879888541
-
-
Grym, J. InTech, ISBN: 978-953-307-080-3; DOI: 10.5772/8564
-
Shearn, M.; Sun, X.; Henry, M. D.; Yariv, A.; Scherer, A. Semiconductor Technologies, Advanced plasma processing: etching, deposition, and wafer bonding techniques for semiconductor applications, Grym, J., Ed.; InTech, 2010; ISBN: 978-953-307-080-3; DOI: 10.5772/8564.
-
(2010)
Semiconductor Technologies, Advanced Plasma Processing: Etching, Deposition, and Wafer Bonding Techniques for Semiconductor Applications
-
-
Shearn, M.1
Sun, X.2
Henry, M.D.3
Yariv, A.4
Scherer, A.5
-
4
-
-
31144441811
-
Porous low dielectric constant materials for microelectronics
-
Baklanov, M. R.; Maex, K. Porous low dielectric constant materials for microelectronics Phil. Trans. R. Soc. A 2006, 364, 201-215
-
(2006)
Phil. Trans. R. Soc. A
, vol.364
, pp. 201-215
-
-
Baklanov, M.R.1
Maex, K.2
-
5
-
-
84880150109
-
Roles of plasma-generated vacuum-ultraviolet photons and oxygen radicals in damaging nanoporous low-k films
-
Lee, J.; Graves, D. B. Roles of plasma-generated vacuum-ultraviolet photons and oxygen radicals in damaging nanoporous low-k films J. Vac. Sci. Technol., A 2013, 31, 041302-1-11
-
(2013)
J. Vac. Sci. Technol., A
, vol.31
, pp. 0413021-04130211
-
-
Lee, J.1
Graves, D.B.2
-
6
-
-
77958164663
-
The mechanism of low- k SiOCH film modification by oxygen atoms
-
Braginsky, O. V.; Kovalev, A. S.; Lopaev, D. V.; Malykhin, E. M.; Mankelevich, Y. A.; Rakhimova, T. V.; Rakhimov, A. T.; Vasilieva, A. N.; Zyryanov, S. M.; Baklanov, M. R. The mechanism of low- k SiOCH film modification by oxygen atoms J. Appl. Phys. 2010, 108, 073303-1-10
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 0733031-07330310
-
-
Braginsky, O.V.1
Kovalev, A.S.2
Lopaev, D.V.3
Malykhin, E.M.4
Mankelevich, Y.A.5
Rakhimova, T.V.6
Rakhimov, A.T.7
Vasilieva, A.N.8
Zyryanov, S.M.9
Baklanov, M.R.10
-
7
-
-
84873671096
-
Plasma processing of low- k dielectrics
-
Baklanov, M. R.; De Marneffe, J.-F.; Shamiryan, D.; Urbanowicz, A. M.; Shi, H.; Rakhimova, T. V.; Huang, H.; Ho, P. S. Plasma processing of low- k dielectrics J. Appl. Phys. 2013, 113, 041101
-
(2013)
J. Appl. Phys.
, vol.113
, pp. 041101
-
-
Baklanov, M.R.1
De Marneffe, J.-F.2
Shamiryan, D.3
Urbanowicz, A.M.4
Shi, H.5
Rakhimova, T.V.6
Huang, H.7
Ho, P.S.8
-
8
-
-
31144461878
-
Effect of plasma interactions with low- k films as a function of porosity, plasma chemistry, and temperature
-
Worsley, M. A.; Bent, S. F.; Gates, S. M.; Fuller, N. C. M.; Volksen, W.; Steen, M.; Dalton, T. Effect of plasma interactions with low- k films as a function of porosity, plasma chemistry, and temperature J. Vac. Sci. Technol., B 2005, 23, 395-405
-
(2005)
J. Vac. Sci. Technol., B
, vol.23
, pp. 395-405
-
-
Worsley, M.A.1
Bent, S.F.2
Gates, S.M.3
Fuller, N.C.M.4
Volksen, W.5
Steen, M.6
Dalton, T.7
-
9
-
-
79952414024
-
Cryogenic plasmas for controlled processing of nanoporous materials
-
Iacopi, F.; Choi, J. H.; Terashima, K.; Rice, P. M.; Dubois, G. Cryogenic plasmas for controlled processing of nanoporous materials Phys. Chem. Chem. Phys. 2011, 9, 3634-3637
-
(2011)
Phys. Chem. Chem. Phys.
, vol.9
, pp. 3634-3637
-
-
Iacopi, F.1
Choi, J.H.2
Terashima, K.3
Rice, P.M.4
Dubois, G.5
-
10
-
-
69549095860
-
Pore sealing of mesoporous silica low- k dielectrics by oxygen and argon plasma treatments
-
Chang, C. C.; Pan, F.-M.; Chen, C.-W. Pore sealing of mesoporous silica low- k dielectrics by oxygen and argon plasma treatments Microelectron. Eng. 2009, 86, 2241-2246
-
(2009)
Microelectron. Eng.
, vol.86
, pp. 2241-2246
-
-
Chang, C.C.1
Pan, F.-M.2
Chen, C.-W.3
-
11
-
-
75649140552
-
Atomic Layer Deposition: An Overview
-
George, S. M. Atomic Layer Deposition: An Overview Chem. Rev. 2010, 110, 111-131
-
(2010)
Chem. Rev.
, vol.110
, pp. 111-131
-
-
George, S.M.1
-
12
-
-
77952972912
-
Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening
-
Urbanowicz, A. M.; Vanstreels, K.; Verdonck, P.; Shamiryan, D.; De Gendt, S.; Baklanov, M. R. Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening J. Appl. Phys. 2010, 107, 104122
-
(2010)
J. Appl. Phys.
, vol.107
, pp. 104122
-
-
Urbanowicz, A.M.1
Vanstreels, K.2
Verdonck, P.3
Shamiryan, D.4
De Gendt, S.5
Baklanov, M.R.6
-
13
-
-
77953012282
-
Effect of energetic ions on plasma damage of porous SiCOH low-k materials
-
Kunnen, E.; Baklanov, M. R.; Franquet, A.; Shamiryan, D.; Rakhimova, T. V. Effect of energetic ions on plasma damage of porous SiCOH low-k materials J. Vac. Sci. Technol., B 2010, 28, 450-459
-
(2010)
J. Vac. Sci. Technol., B
, vol.28
, pp. 450-459
-
-
Kunnen, E.1
Baklanov, M.R.2
Franquet, A.3
Shamiryan, D.4
Rakhimova, T.V.5
-
14
-
-
79953731364
-
2 on Planar Substrates and in Nanoporous Films
-
2 on Planar Substrates and in Nanoporous Films J. Phys. Chem. 2011, 115, 6605-6610
-
(2011)
J. Phys. Chem.
, vol.115
, pp. 6605-6610
-
-
Dendooven, J.1
Sree, S.P.2
De Keyser, K.3
Deduytsche, D.4
Martens, J.A.5
Ludwig, K.F.6
Detavernier, C.7
-
15
-
-
80055003755
-
Tailoring nanoporous materials by atomic layer deposition
-
Detavernier, C.; Dendooven, J.; Sree, S. P.; Ludwig, K. F.; Martens, J. A. Tailoring nanoporous materials by atomic layer deposition Chem. Soc. Rev. 2011, 40 (11) 5242-5253
-
(2011)
Chem. Soc. Rev.
, vol.40
, Issue.11
, pp. 5242-5253
-
-
Detavernier, C.1
Dendooven, J.2
Sree, S.P.3
Ludwig, K.F.4
Martens, J.A.5
-
16
-
-
79959357998
-
In situ Synchrotron based X-ray Fluorescence and Scattering Measurements during ALD
-
Devloo-Casier, K.; Dendooven, J.; Ludwig, K. F.; Lekens, G.; D'Haen, J.; Detavernier, C. In situ Synchrotron based X-ray Fluorescence and Scattering Measurements during ALD Appl. Phys. Lett. 2011, 98, 231905
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 231905
-
-
Devloo-Casier, K.1
Dendooven, J.2
Ludwig, K.F.3
Lekens, G.4
D'Haen, J.5
Detavernier, C.6
-
17
-
-
0033116396
-
Nondestructive Determination of Pore Size Distribution in Thin Films Deposited on Solid Substrates
-
Dultsev, F. N.; Baklanov, M. R. Nondestructive Determination of Pore Size Distribution in Thin Films Deposited on Solid Substrates Electrochem. Solid-State Lett. 1999, 2, 192
-
(1999)
Electrochem. Solid-State Lett.
, vol.2
, pp. 192
-
-
Dultsev, F.N.1
Baklanov, M.R.2
-
18
-
-
0034187895
-
Determination of pore size distribution in thin films by ellipsometric Porosimetry
-
Baklanov, M. R.; Mogilnikov, K. P.; Polovinkin, V. G.; Dultsev, F. N. Determination of pore size distribution in thin films by ellipsometric Porosimetry J. Vac. Sci. Technol., B 2000, 18, 1385
-
(2000)
J. Vac. Sci. Technol., B
, vol.18
, pp. 1385
-
-
Baklanov, M.R.1
Mogilnikov, K.P.2
Polovinkin, V.G.3
Dultsev, F.N.4
-
20
-
-
77958021463
-
Atomic Layer Deposition of Aluminum Oxide in Mesoporous Silica Gel
-
Elam, J. W.; Libera, J. A.; Huynh, T. H.; Feng, H.; Pellin, M. J. Atomic Layer Deposition of Aluminum Oxide in Mesoporous Silica Gel J. Phys. Chem. C 2010, 114, 17286-17292
-
(2010)
J. Phys. Chem. C
, vol.114
, pp. 17286-17292
-
-
Elam, J.W.1
Libera, J.A.2
Huynh, T.H.3
Feng, H.4
Pellin, M.J.5
-
21
-
-
33846627817
-
Atomic Layer Deposition of Aluminum Oxide on Hydrophobic and Hydrophilic Surfaces
-
Kobayashi, N. P.; Donley, C. L.; Wang, S.-Y.; Williams, R. S. Atomic Layer Deposition of Aluminum Oxide on Hydrophobic and Hydrophilic Surfaces J. Cryst. Growth 2007, 299, 218-222
-
(2007)
J. Cryst. Growth
, vol.299
, pp. 218-222
-
-
Kobayashi, N.P.1
Donley, C.L.2
Wang, S.-Y.3
Williams, R.S.4
-
22
-
-
84857516176
-
Ellipsometric porosimetry for the characterization of coatings grown by atomic layer deposition in nanoporous thin films
-
Dendooven, J.; Devloo-Casier, K.; Van Hove, R.; Levrau, E.; Detavernier, C. Ellipsometric porosimetry for the characterization of coatings grown by atomic layer deposition in nanoporous thin films Langmuir 2012, 28, 3852-3859
-
(2012)
Langmuir
, vol.28
, pp. 3852-3859
-
-
Dendooven, J.1
Devloo-Casier, K.2
Van Hove, R.3
Levrau, E.4
Detavernier, C.5
-
23
-
-
70349462802
-
Recombination of O and H atoms on the surface of nanoporous dielectrics
-
Rakhimova, T. V.; Braginsky, O. V.; Kovalev, A. S.; Lopaev, D. V.; Mankelevich, Y. A.; Malykhin, E. M.; Rakhimov, A. T.; Vasilieva, A. N.; Zyryanov, S. M.; Baklanov, M. R. Recombination of O and H atoms on the surface of nanoporous dielectrics IEEE Trans. Plasma Sci. 2009, 37, 1697-1704
-
(2009)
IEEE Trans. Plasma Sci.
, vol.37
, pp. 1697-1704
-
-
Rakhimova, T.V.1
Braginsky, O.V.2
Kovalev, A.S.3
Lopaev, D.V.4
Mankelevich, Y.A.5
Malykhin, E.M.6
Rakhimov, A.T.7
Vasilieva, A.N.8
Zyryanov, S.M.9
Baklanov, M.R.10
-
24
-
-
84875748125
-
Modification of organosilicate glasses low-k films under extreme and vacuum ultraviolet radiation
-
akhimova, T. V.; Rakhimov, A. T.; Mankelevich, Yu. A.; Lopaev, D. V.; Kovalev, A. S.; Vasil'eva, A. N.; Proshina, O. V.; Braginsky, O. V.; Zyryanov, S. M.; Kurchikov, K.; Novikova, N. N.; Baklanov, M. R. Modification of organosilicate glasses low-k films under extreme and vacuum ultraviolet radiation Appl. Phys. Lett. 2013, 102, 111902
-
(2013)
Appl. Phys. Lett.
, vol.102
, pp. 111902
-
-
Akhimova, T.V.1
Rakhimov, A.T.2
Mankelevich, Yu.A.3
Lopaev, D.V.4
Kovalev, A.S.5
Vasil'Eva, A.N.6
Proshina, O.V.7
Braginsky, O.V.8
Zyryanov, S.M.9
Kurchikov, K.10
Novikova, N.N.11
Baklanov, M.R.12
|