The feasibility of high-efficiency InAs/GaAs quantum dot intermediate band solar cells

Solar Energy Materials and Solar Cells

Volumn 130, Issue , 2014, Pages 225-233

  Mellor, A ^a   Luque, A ^a   Tobias I ^a   Marti A ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

Author keywords

High efficiency; Intermediate band; Light trapping; Quantum dot

Indexed keywords

EFFICIENCY; SEMICONDUCTOR QUANTUM DOTS;

ABSORPTION ENHANCEMENT; HIGH-EFFICIENCY; INTERMEDIATE BANDS; INTERMEDIATE-BAND SOLAR CELLS; LIGHT-TRAPPING; OPERATING PRINCIPLES; QUANTITATIVE PREDICTION; QUANTUM DOT; INAS/GAAS;

SOLAR CELLS;

EID: 84905224587     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2014.07.006     Document Type: Article

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