Fabrication of ultra-high-density InAs quantum dots using the strain-compensation technique

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 2, 2011, Pages 425-428

  Akahane, Kouichi ^a   Yamamoto, Naokatsu ^a   Kawanishi, Tetsuya ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

molecular beam epitaxy; quantum dot; self assembly; strain compensation

Indexed keywords

COMPENSATION TECHNIQUES; FABRICATION TECHNIQUE; INAS QUANTUM DOTS; INP; NOVEL STRAINS; ORDERED STRUCTURES; PHOTOLUMINESCENCE EMISSION; QUANTUM DOT; ROOM TEMPERATURE; SIZE UNIFORMITY; STACKED LAYER; STRAIN COMPENSATION; ULTRA-HIGH;

EPITAXIAL GROWTH; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SELF ASSEMBLY; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79751495232     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000432     Document Type: Article

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