Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Alonso Alvarez D ^a   Taboada, A G ^a   Ripalda, J M ^a   Aln B ^a   Gonzalez Y ^a   Gonzalez L ^a   Garcia J M ^a   Briones, F ^a   Marti A ^b   Luque, A ^b   Sanchez A M ^c   Molina, S I ^c  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b INSTITUTO DE ENERGÍA SOLAR   (Spain)

^c UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; NANOCRYSTALS; SOLAR CELLS; SOLAR POWER GENERATION; THERMODYNAMIC STABILITY;

CARRIER RECOMBINATION; OPTICAL QUALITIES; PHOTOVOLTAIC APPLICATIONS; QUANTUM DOT LAYERS; QUANTUM-DOT SIZE; SOLAR CELL STRUCTURES; STRAIN COMPENSATION; STRAIN-COMPENSATED;

SEMICONDUCTOR QUANTUM DOTS;

EID: 52949122102     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2978243     Document Type: Article

References (18)

1. A. Luque and A. Martí, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.78.5014 78, 5014 (1997).
2. A. Martí, L. Cuadra, and A. Luque, Conference Record of the 28th IEEE Photovoltaic Specialists Conference-2000, 2000 (unpublished), pp. 940-943.
3. A. J. Nozik, Physica E (Amsterdam) 1386-9477 10.1016/S1386-9477(02)00374- 0 14, 115 (2002).
4. J. T. Ng, U. Bangert, and M. Missous, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/22/2/014 22, 80 (2007).
5. J. Tatebayashi, N. Nuntawong, Y. C. Xin, P. S. Wong, S. H. Huang, C. P. Hains, L. F. Lester, and D. L. Huffaker, Appl. Phys. Lett. 0003-6951 10.1063/1.2208553 88, 221107 (2006).
6. R. B. Laghumavarapu, M. El-Emawy, N. Nuntawong, A. Moscho, L. F. Lester, and D. L. Huffaker, Appl. Phys. Lett. 0003-6951 10.1063/1.2816904 91, 243115 (2007).
7. N. Nuntawong, S. Birudavolu, C. Hains, S. Huang, H. Xu, and D. Huffaker, Appl. Phys. Lett. 0003-6951 10.1063/1.1805707 85, 3050 (2004).
8. R. Oshima, T. Hashimoto, H. Shigekawa, and Y. Okada, J. Appl. Phys. 0021-8979 10.1063/1.2359623 100, 083110 (2006).
9. N. Ekins-Daukes, K. Kawaguchi, and J. Zhang, Cryst. Growth Des. 1528-7483 10.1021/cg025502y 2, 287 (2002).
10. M. Lachab and H. Sakaki, Appl. Surf. Sci. 0169-4332 10.1016/j.apsusc. 2007.11.023 254, 3385 (2008).
11. K. Koike, S. Shuwei, and M. Yano, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.39.1622 39, 1622 (2000).
12. B. Aĺn, J. Martínez-Pastor, L. González, J. M. García, S. I. Molina, A. Ponce, and R. García, Phys. Rev. B 0163-1829 10.1103/PhysRevB.65.241301 65, 241301 (2002).
13. S. I. Molina, T. Ben, D. L. Sales, J. Pizarro, P. Galindo, M. Varela, S. Pennycook, D. Fuster, Y. González, and L. González, Nanotechnology 0957-4484 10.1088/0957-4484/17/22/020 17, 5652 (2006).
14. J. Tatebayashi, Y. Arakawa, N. Hatori, H. Ebe, M. Sugawara, H. Sudo, and A. Kuramata, Appl. Phys. Lett. 0003-6951 10.1063/1.1781741 85, 1024 (2004).
15. J. M. Ripalda, D. Alonso-Álvarez, B. Aĺn, A. G. Taboada, J. M. García, Y. González, and L. González, Appl. Phys. Lett. 0003-6951 10.1063/1.2753716 91, 012111 (2007).
16. A. Martí, N. López, E. Antolin, E. Canovas, C. Stanley, C. Farmer, L. Cuadra, and A. Luque, Thin Solid Films 511, 638 (2006).
17. B. Aĺn, J. Bosch, D. Granados, J. Martínez-Pastor, J. M. García, and L. González, Phys. Rev. B 0163-1829 10.1103/PhysRevB.75.045319 75, 045319 (2007).
18. P. Rodin and I. Grekhov, Appl. Phys. Lett. 0003-6951 10.1063/1.1947915 86, 243504 (2005).