In-plane quantum-dot superlattices of InAs on GaAsSb/GaAs(001) for intermediate band solar-cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 002612-002614

  Fujita, H ^a   Yamamoto, K ^a   Ohta, J ^a   Eguchi, Y ^a   Yamaguchi, K ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; CAPPING LAYER; INAS; INTERMEDIATE BANDS; INTERNAL QUANTUM EFFICIENCY; LATERAL SIZES; MINIBANDS; PHOTOLUMINESCENCE PROPERTIES; QUANTUM DOT SUPERLATTICES; SURFACTANT EFFECTS; TIME-RESOLVED PL MEASUREMENT; ULTRAHIGH DENSITY;

COALESCENCE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SURFACE ACTIVE AGENTS;

SEMICONDUCTOR SUPERLATTICES;

EID: 84861016338     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186483     Document Type: Conference Paper

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4. T. Kanto, and K. Yamaguchi, J. Appl. Phys., 101, 2007, 094901.r
5. th IEEE-PVSC, 2010.