Novel heterogeneous integration technology of III-V layers and InGaAs FinFETs to silicon

Advanced Functional Materials

Volumn 24, Issue 28, 2014, Pages 4420-4426

  Dai, Xing ^a,b   Nguyen, Binh Minh ^a,c   Hwang, Yoontae ^a   Soci, Cesare ^b   Dayeh, Shadi A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

compound semiconductors; FinFETs; hybrid integration; InGaAs; silicide

Indexed keywords

CMOS INTEGRATED CIRCUITS; DATA PROCESSING; HYBRID MATERIALS; INTEGRATED CIRCUITS; MOSFET DEVICES; NICKEL; NICKEL COMPOUNDS; OPTOELECTRONIC DEVICES; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICIDES; SILICON;

COMPOUND SEMICONDUCTORS; FINFETS; HETEROGENEOUS INTEGRATION; HYBRID INTEGRATION; III-V COMPOUND SEMICONDUCTOR; INGAAS; OPTOELECTRONIC APPLICATIONS; SWITCHING CHARACTERISTICS;

INTEGRATION;

EID: 84904649017     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201400105     Document Type: Article

References (38)

1. J. A. del Alamo, Int. Conf. Compd. Semicond. Manufact. Technol. 2011, 17.
2. J. Welser, J. L. Hoyt, S. Takagi, J. F. Gibbons, Int. Electron Devices Meeting, Technical Digest 1994, 373.
3. G. D. Wilk, R. M. Wallace, J. M. Anthony, J. Appl. Phys. 2001, 89, 5243.
4. D. Hisamoto, W.-c. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, E. Anderson, T.-j. King, J. Bokor, C. Hu, IEEE Trans. Electron Devices 2000, 47, 2320.
5. a) J. A. del Alamo, Nature 2011, 479, 317
6. b) International Technology Roadmap For Semiconductors (ITRS) 2011 Edition Excecutive Summary Page 38.
7. N. Mukherjee, J. Boardman, B. Chu-Kung, G. Dewey, A. Eisenbach, J. Fastenau, J. Kavalieros, W. K. Liu, D. Lubyshev, M. Metz, K. Millard, M. Radosavljevic, T. Stewart, H. W. Then, P. Tolchinsky, R. Chau, Int. Electron Devices Meeting 2011, 35.1.1
8. J. Z. Li, J. Bai, J. S. Park, B. Adekore, K. Fox, M. Carroll, A. Lochtefeld, Z. Shellenbarger, Appl. Phys. Lett. 2007, 91, 021114.
9. J. Z. Li, J. Bai, J. M. Hydrick, J. G. Fiorenza, C. Major, M. Carroll, Z. Shellenbarger, A. Lochtefeld, ECS Trans. 2009, 18, 887.
10. a) M. Bruel, Electron. Lett. 1995, 31, 1201
11. b) L. Czornomaz, N. Daix, D. Caimi, M. Sousa, R. Erni, M. D. Rossell, M. El-Kazzi, C. Rossel, C. Marchiori, E. Uccelli, M. Richter, H. Siegwart, J. Fompeyrine, Int. Electron Devices Meeting 2012, 23.4.1.
12. a) D. Liang, A. W. Fang, H. Park, T. E. Reynolds, K. Warner, D. C. Oakley, J. E. Bowers, J. Electron. Mater. 2008, 37, 1552
13. b) M. Yokoyama, R. Iida, Y. Ikku, S. Kim, H. Takagi, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi, Semicond. Sci. Technol. 2013, 28, 094009
14. c) S. A. Dayeh, P. Chen, Y. Jing, E. T. Yu, S. S. Lau, D. Wang, Appl. Phys. Lett. 2008, 93, 203109.
15. G. S. Matijasevic, C. C. Lee, C. Y. Wang, Thin Solid Films 1993, 223, 276.
16. W. Chen, P. Chen, J. E. Pulsifer, T. L. Alford, T. F. Kuech, S. S. Lau, Appl. Phys. Lett. 2008, 92, 212109.
17. a) C. W. Cheng, K. T. Shiu, N. Li, S. J. Han, L. Shi, D. K. Sadana, Nat Commun 2013, 4, 1577
18. b) A. Polman, H. A. Atwater, Nat. Mater. 2012, 11, 174
19. c) G. J. Bauhuis, P. Mulder, E. J. Haverkamp, J. C. C. M. Huijben, J. J. Schermer, Sol. Energy Mater. Sol. Cells 2009, 93, 1488
20. d) R. Tatavarti, G. Hillier, A. Dzankovic, G. Martin, F. Tuminello, R. Navaratnarajah, G. Du, D. P. Vu, N. Pan, IEEE Photovoltaic Specialists Conf. 2008, 1
21. e) A. Cornfeld, D. Mcglynn, T. Varghese, US 20100047959A1 2010.
22. H. Ko, K. Takei, R. Kapadia, S. Chuang, H. Fang, P. W. Leu, K. Ganapathi, E. Plis, H. S. Kim, S. Y. Chen, M. Madsen, A. C. Ford, Y. L. Chueh, S. Krishna, S. Salahuddin, A. Javey, Nature 2010, 468, 286.
23. a) D. Hisamoto, T. Kaga, Y. Kawamoto, E. Takeda, Int. Electron Devices Meeting. 1989, 833
24. b) X. Huang, W.-C. Lee, C. Kuo, D. Hisamoto, L. Chang, J. Kedzierski, E. Anderson, H. Takeuchi, Y.-K. Choi, K. Asano, V. Subramanian, T.-J. King, J. Bokor, C. Hu, Int. Electron Devices Meeting 1999, 67
25. c) C. Auth, C. Allen, A. Blattner, D. Bergstrom, M. Brazier, M. Bost, M. Buehler, V. Chikarmane, T. Ghani, T. G. Glassman, R. Han, W. Hanken, D. Hattendorf, M. Hentges, P. Heussner, R. Hicks, J. Ingerly, D. Jain, P. Jaloviar, S. James, R. Jones, D. Jopling, J. Joshi, S. Kenyon, C. Liu, H. McFadden, R. Mcintyre, B. Neirynck, J. Parker, C. Pipes, L. Post, I. Pradhan, S. Prince, M. Ramey, S. Reynolds, T. Roesler, J. Sandford, J. Seiple, J. Smith, P. Thomas, C. Towner, D. Troeger, T. Weber, C. Yashar, P. Zawadzki, K. Mistry, Symp. VLSI Technol. 2012, 131.
26. a) F. Xue, A. Jiang, Y.-T. Chen, Y. Wang, F. Zhou, Y.-F. Chang, J. Lee, Int. Electron Devices Meeting 2012, 27.5.1
27. b) J. J. Gu, X. W. Wang, H. Wu, J. Shao, A. T. Neal, M. J. Manfra, R. G. Gordon, P. D. Ye, Int. Electron Devices Meeting 2012, 27.6.1.
28. a) J. J. Gu, P. D. Ye, ECS Trans. 2012, 45, 217
29. b) X. Zhang, H. X. Guo, Z. Zhu, X. Gong, Y.-C. Yeo, Solid-State Electron. 2013, 84, 83.
30. S. A. Dayeh, W. Tang, B.-M. Nguyen, X. Dai, Y. Liu, Y. Hwang, X.-H. Liu, R. Chen, ECS Trans. 2013, 58, 115.
31. K. Lee, K.-T. Shiu, J. D. Zimmerman, C. K. Renshaw, S. R. Forrest, Appl. Phys. Lett. 2010, 97, 101107.
32. Y. Taur, T. H. Ning, Fundamental of Modern VLSI Devices, Cambridge University, Cambridge, 1998, 138.
33. a) X. Zhang, Ivana, H. X. Guo, X. Gong, Q. Zhou, Y.-C. Yeo, J. Electrochem. Soc. 2012, 159, H511
34. b) W. Lu, P. Xie, C. M. Lieber, IEEE Trans. Electron Devices 2008, 55, 2859.
35. H.-C. Chin, X. Gong, L. Wang, H. K. Lee, L. Shi, Y.-C. Yeo, IEEE Electron Device Lett. 2011, 32, 146.
36. J. J. Gu, H. Wu, Y. Liu, A. T. Neal, R. G. Gordon, P. D. Ye, IEEE Electron Device Lett. 2012, 33, 967.
37. Y. Wu, P. D. Ye, ECS Trans. 2010, 28, 185.
38. E. O'Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace, P. K. Hurley, J. Appl. Phys. 2011, 109, 024101.