Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation

Applied Physics Letters

Volumn 93, Issue 20, 2008, Pages

  Dayeh, Shadi A ^a   Chen, Peng ^a   Jing, Yi ^a   Yu, Edward T ^a   Lau, S S ^a   Wang, Deli ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC WIRE; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; ORGANOMETALLICS; PHASE INTERFACES; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; THREE DIMENSIONAL; VAPOR PHASE EPITAXY;

ELECTRICAL ISOLATIONS; FABRICATION TECHNIQUES; HETERO EPITAXIES; NANOWIRE ARRAYS; ORGANOMETALLIC VAPOR PHASE EPITAXIES; STRUCTURAL DEFECTS; TRANSPORT BARRIERS; VERTICAL DEVICES;

INDIUM ARSENIDE;

EID: 56849088155     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3013566     Document Type: Article

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