Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics

Nature Communications

Volumn 4, Issue , 2013, Pages

  Cheng, Cheng Wei ^a   Shiu, Kuen Ting ^a   Li, Ning ^a   Han, Shu Jen ^a   Shi, Leathen ^a   Sadana, Devendra K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; METAL OXIDE;

ARSENIC; ELECTRICAL CONDUCTIVITY; ELECTRONIC EQUIPMENT; GALLIUM; INDUSTRIAL TECHNOLOGY; METAL; OXIDE; PHOTOVOLTAIC SYSTEM; PROCESSING; RECYCLING; SEMICONDUCTOR INDUSTRY; SOLAR POWER; SUBSTRATE;

ANALYTIC METHOD; ARTICLE; ATOMIC FORCE MICROSCOPY; CELL GROWTH; CELL STRUCTURE; CHEMICAL REACTION; ELECTRONICS; FILM; HIGH THROUGHPUT SCREENING; SEMICONDUCTOR; SURFACE PROPERTY; SURFACE TENSION ASSISTED EPITAXIAL LIFT OFF;

EID: 84875824248     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms2583     Document Type: Article

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