SCOPUS 정보 검색 플랫폼

Solar Energy Materials and Solar Cells

Volumn 93, Issue 9, 2009, Pages 1488-1491

26.1% thin-film GaAs solar cell using epitaxial lift-off

(5) Bauhuis, G J a Mulder, P a Haverkamp, E J a Huijben, J C C M a Schermer, J J a

a RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

Author keywords

III V; Thin film

Indexed keywords

ACTIVE LAYER; CELL TYPES; CRITICAL ISSUES; EPITAXIAL LIFT-OFF TECHNIQUES; EPITAXIAL LIFTOFF; GAAS SOLAR CELLS; GAAS SUBSTRATES; III-V; III-V SOLAR CELLS; LOW TEMPERATURES; MATERIAL QUALITY; METAL MIRROR; SINGLE JUNCTION; THIN-FILM GAAS SOLAR CELLS;

CELLS; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM; SOLAR CELLS; SUBSTRATES; THIN FILM DEVICES; THIN FILMS;

GALLIUM ALLOYS;

EID: 67649600425 PISSN: 09270248 EISSN: None Source Type: Journal
DOI: 10.1016/j.solmat.2009.03.027 Document Type: Article

Times cited : (286)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.