Thin film InP epitaxy on Si (001) using selective aspect ratio trapping

ECS Transactions

Volumn 18, Issue 1 PART 2, 2009, Pages 887-894

  Li, J Z ^a   Bai, J ^a   Hydrick, J M ^a   Fiorenza, J G ^a   Major, C ^a   Carroll, M ^a   Shellenbarger, Z ^b   Lochtefeld, A ^a  

^a AmberWave Systems Corporation   (United States)

^b SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM QUALITY; GROWTH PROCESS; HIGH QUALITY; INP; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SEM; SI(0 0 1); TEM; THREADING DISLOCATION;

ASPECT RATIO; CRYSTAL GROWTH; LATTICE MISMATCH; OPTICAL PROPERTIES; PRESSURE DROP; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; THIN FILMS;

DEFECTS;

EID: 77950669353     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3096551     Document Type: Conference Paper

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